Datasheet > MBRS1060RN

MBRS1060RN

更新时间： 2024-11-06 01:13:19

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	385K
描述
Surface Mount Super Fast Rectifiers

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中文翻译

获取价格

数据手册

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MBRS1060RN 数据手册

SFAS801G thru SFAS808G

Taiwan Semiconductor

CREAT BY ART

Surface Mount Super Fast Rectifiers

FEATURES

- Glass passivated junction chip

- Ideal for automated placement

- High efficiency, low VF

- High surge current capability

- Low power loss

- Moisture sensitivity level: level 1, per J-STD-020

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

TO-263AB (D²PAK)

MECHANICAL DATA

Case: TO-263AB (D²PAK)

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Base P/N with prefix "H" on packing code - AEC-Q101 qualified

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

with prefix "H" on packing code meet JESD 201 class 2 whisker test

Polarity: As marked

Weight: 1.33 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

SFAS SFAS SFAS SFAS SFAS SFAS SFAS SFAS

801G 802G 803G 804G 805G 806G 807G 808G

PARAMETER

SYMBOL

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

300

210

300

400

280

400

500

350

500

600

420

600

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

125

Maximum instantaneous forward voltage

I_F= 8 A

V_F

0.95

1.3

1.7

400

Maximum reverse current @ rated VR T_J=25 ℃

T_J=100 ℃

I_R

μA

Maximum reverse recovery time (Note 1)

Typical junction capacitance (Note 2)

Typical thermal resistance

Trr

^OC/W

^OC

R_θJC

T_J

2.2

Operating junction temperature range

Storage temperature range

- 55 to +150

^OC

T_STG

Note 1: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

Document Number: DS_D1405074

Version: L14

12 3 4

中文翻译

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