Datasheet > MBRS1100

MBRS1100

更新时间： 2024-11-10 14:51:39

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	477K
描述
Rectifier device Schottky Diode

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中文翻译

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数据手册

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MBRS1100 数据手册

MBRS120 - MBRS1100

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 20 - 100V

CURRENT: 1.0 A

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMB(DO-214AA)

Dim

Min

3.30

4.06

1.91

0.15

5.00

0.10

0.76

2.00

Max

3.94

4.70

2.21

0.31

5.59

0.20

1.52

2.62

Mechanical Data

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Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.093 grams (approx.)

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

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Characteristic

Symbol

Unit

120

130

140

150

160

180

190

1100

RRM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RWM

100

R(RMS)

RMS Reverse Voltage

Average Rectified Output Current @T_L= 75°C

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

Forward Voltage

@I_F= 1.0A

0.50

0.70

0.85

Peak Reverse Current

At Rated DC Blocking Voltage @T_A= 100°C

@T_A= 25°C

0.5

ꢀ

Typical Thermal Resistance (Note 1)

°C/W

ꢀ

Operating Temperature Range

Storage Temperature Range

-65 to +125

-65 to +150

°C

STG

Note: 1. Mounted on P.C. Board with 5.0mm²copper pad area.

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