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MBRS1100T3 PDF预览

MBRS1100T3

更新时间: 2024-11-18 22:51:27
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 51K
描述
Schottky Power Rectifier

MBRS1100T3 技术参数

是否无铅: 含铅生命周期:End Of Life
零件包装代码:DO-214包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.15其他特性:FREE WHEELING DIODE
应用:POWER配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.75 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

MBRS1100T3 数据手册

 浏览型号MBRS1100T3的Datasheet PDF文件第2页浏览型号MBRS1100T3的Datasheet PDF文件第3页浏览型号MBRS1100T3的Datasheet PDF文件第4页 
MBRS1100T3, MBRS190T3  
Preferred Devices  
Schottky Power Rectifier  
Surface Mount Power Package  
Schottky Power Rectifiers employ the use of the Schottky Barrier  
principle in a large area metal-to-silicon power diode. State-of-the-art  
geometry features epitaxial construction with oxide passivation and  
metal overlay contact. Ideally suited for low voltage, high frequency  
rectification, or as free wheeling and polarity protection diodes, in  
surface mount applications where compact size and weight are critical  
to the system. These state-of-the-art devices have the following  
features:  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
1.0 AMPERE  
90, 100 VOLTS  
Small Compact Surface Mountable Package with J-Bend Leads  
Rectangular Package for Automated Handling  
Highly Stable Oxide Passivated Junction  
High Blocking Voltage — 100 Volts  
150°C Operating Junction Temperature  
Guardring for Stress Protection  
Mechanical Characteristics  
Case: Epoxy, Molded  
Weight: 95 mg (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
SMB  
CASE 403A  
PLASTIC  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
MARKING DIAGRAM  
Shipped in 12 mm Tape and Reel, 2500 units per reel  
Cathode Polarity Band  
B1x  
Markings; MBRS190T3: B19  
Markings; MBRS1100T3: B1C  
B1x = Device Code  
x
= 9 or C  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage MBRS190T3  
MBRS1100T3  
V
V
V
V
RRM  
RWM  
ORDERING INFORMATION  
90  
100  
R
Device  
Package  
SMB  
Shipping  
Average Rectified Forward Current  
I
A
A
F(AV)  
MBRS1100T3  
MBRS190T3  
2500/Tape & Reel  
2500/Tape & Reel  
T = 120°C  
1.0  
2.0  
L
T = 100°C  
L
SMB  
Non–Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, Single  
Phase, 60 Hz)  
I
50  
FSM  
Preferred devices are recommended choices for future use  
and best overall value.  
Operating Junction Temperature  
Voltage Rate of Change  
T
–65 to +150  
10  
°C  
J
dv/dt  
V/ns  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
October, 2000 – Rev. 5  
MBRS1100T3/D  

MBRS1100T3 替代型号

型号 品牌 替代类型 描述 数据表
B2100-13-F DIODES

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