Datasheet > MBRP3045N

MBRP3045N

更新时间： 2024-09-13 12:10:19

品牌	Logo	应用领域
科盛美 - KERSEMI		二极管局域网
页数	文件大小	规格书
3页	406K
描述
Low forward voltage drop

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MBRP3045N 数据手册

MBRP3045N

Features

•

Low forward voltage drop

High frequency properties and switching speed

Guard ring for over-voltage protection

Applications

TO-220

•

Switched mode power supply

Freewheeling diodes

1. Anode 2.Cathode 3. Anode

SCHOTTKY BARRIER RECTIFIER

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Maximum Repetitive Reverse Voltage

Maximum DC Reverse Voltage

Value

Units

RRM

Average Rectified Forward Current

@ T = 100°C

F(AV)

FSM

Non-repetitive Peak Surge Current (per diode)

60Hz Single Half-Sine Wave

200

Operating Junction and Storage Temperature

-65 to +150

°C

J, STG

Thermal Characteristics

Symbol

Parameter

Value

Units

Maximum Thermal Resistance, Junction to Case (per diode)

2.2

°C/W

θJC

Electrical Characteristics ^{(per diode)}

Symbol

Parameter

Value

Units

Maximum Instantaneous Forward Voltage

I = 15A

= 25 °C

= 125 °C

= 25 °C

= 125 °C

0.65

0.57

0.80

0.65

I = 15A

I = 30A

Maximum Instantaneous Reverse Current

@ rated V

= 25 °C

= 125 °C

www.kersemi.com

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