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MBRF1060

更新时间: 2024-09-21 11:11:27
品牌 Logo 应用领域
威世 - VISHAY 整流二极管瞄准线功效局域网
页数 文件大小 规格书
5页 144K
描述
Schottky Barrier Rectifier

MBRF1060 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.34Is Samacsys:N
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 V最大非重复峰值正向电流:150 A
元件数量:1最高工作温度:150 °C
最大输出电流:10 A最大重复峰值反向电压:60 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKYBase Number Matches:1

MBRF1060 数据手册

 浏览型号MBRF1060的Datasheet PDF文件第2页浏览型号MBRF1060的Datasheet PDF文件第3页浏览型号MBRF1060的Datasheet PDF文件第4页浏览型号MBRF1060的Datasheet PDF文件第5页 
MBR(F,B)1035 thru MBR(F,B)1060  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
FEATURES  
TO-220AC  
ITO-220AC  
• Low power loss, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
1
1
MBR10xx  
PIN 1  
MBRF10xx  
PIN 1  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
CASE  
PIN 2  
PIN 2  
TO-263AB  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
K
2
TYPICAL APPLICATIONS  
1
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters and polarity protection application.  
MBRB10xx  
PIN 1  
K
HEATSINK  
PIN 2  
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, TO-263AB  
PRIMARY CHARACTERISTICS  
Epoxy meets UL 94V-0 flammability rating  
IF(AV)  
10 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
VRRM  
IFSM  
35 V to 60 V  
150 A  
VF  
0.57 V, 0.70 V  
150 °C  
TJ max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL MBR1035 MBR1045 MBR1050 MBR1060  
VRRM 35 45 50 60  
IF(AV)  
UNIT  
V
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (Fig. 1)  
10  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
TJ  
1.0  
0.5  
A
V/µs  
°C  
10 000  
Operating junction temperature range  
Storage temperature range  
- 65 to + 150  
- 65 to + 175  
TSTG  
°C  
Isolation voltage (ITO-220AC only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
Document Number: 88669  
Revision: 07-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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