Datasheet > MBRF1060CTR

MBRF1060CTR

更新时间： 2022-02-26 12:32:30

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	541K
描述
10.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

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数据手册

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MBRF1060CTR 数据手册

MBRF1045CTR thru MBRF10200CTR

MBRF1045CTR/MBRF1060CTR/MBRF10100CTR/MBRF10200CTR

Pb Free Plating Product

10.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

ITO-220AB

Unit : inch (mm)

Features

ꢀ

.189(4.8)

.165(4.2)

Standard MBR matured technology with high reliablity

.406(10.3)

.381(9.7)

.134(3.4)

.118(3.0)

ꢀ Low forward voltage drop

ꢀ High current capability

ꢀ Low reverse leakage current

ꢀ High surge current capability

Application

.130(3.3)

.114(2.9)

Automotive Inverters and Solar Inverters

Plating Power Supply,SMPS,EPS and UPS

Car Audio Amplifiers and Sound Device Systems

ꢀ

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.032(.8)

MAX

Mechanical Data

(2.55)

ꢀ Case: Fully Isolated Molding TO-220F Full Plastic Pak

ꢀ Epoxy: UL 94V-0 rate flame retardant

ꢀ Terminals: Solderable per MIL-STD-202

method 208

(2.55)

Case

ꢀ Polarity: As marked on diode body

ꢀ Mounting position: Any

ꢀ Weight: 2.0 gram approximately

Doubler

Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Series

Negative

Common Cathode Common Anode

Suffix "CT" Suffix "CTR"

Positive

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

PARAMETER

SYMBOL

UNIT

MBRF1045CTR MBRF1060CTR MBRF10100CTR MBRF10200CTR

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated V_R, Square Wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

I_RRM

120

Peak repetitive reverse surge current (Note 1)

0.5

Maximum instantaneous forward voltage (Note 2)

I_F= 5 A, T_J=25°C

0.70

0.57

0.80

0.67

0.80

0.65

0.90

0.75

0.85

0.75

0.95

0.85

0.88

0.78

0.98

0.88

I_F= 5 A, T_J=125°C

V_F

I_F= 10 A, T_J=25°C

I_F= 10 A, T_J=125°C

T_J=25°C

Maximum reverse current @ rated V_R

T_J=125°C

0.1

I_R

Voltage rate of change (Rated V_R)

Typical thermal resistance

10000

3.5

dV/dt

R_θJC

T_J

V/μs

°C/W

°C

Operating junction temperature range

Storage temperature range

- 55 to +150

T_STG

°C

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Rev.07C

Page 1/2

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