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MBRF1090 PDF预览

MBRF1090

更新时间： 2024-02-22 23:03:14
品牌 Logo 应用领域
TSC 二极管瞄准线功效局域网
页数 文件大小 规格书
2页 78K
描述
Isolation 10.0 AMPS. Schottky Barrier Rectifiers

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中文翻译

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MBRF1090 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.76
Is Samacsys：N二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.85 V最大非重复峰值正向电流：120 A
最高工作温度：150 °C最大输出电流：5 A
最大重复峰值反向电压：90 V子类别：Rectifier Diodes
表面贴装：NO技术：SCHOTTKY
Base Number Matches：1

MBRF1090 数据手册

 浏览型号MBRF1090的Datasheet PDF文件第2页 
MBRF1035 THRU MBRF10100  
Isolation 10.0 AMPS. Schottky Barrier Rectifiers  
Voltage Range  
35 to 100 Volts  
Current  
10.0 Amperes  
ITO-220AC  
Features  
ꢀ
Plastic material used carries Underwriters Laboratory  
Classifications 94V-0  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications  
Guardring for overvoltage protection  
ꢀ
ꢀ
High temperature soldering guaranteed:  
260oC/10 seconds,0.25”(6.35mm)from case  
Mechanical Data  
ꢀ
Cases: ITO-220AC molded plastic body  
Terminals: Lead solderable per MIL-STD-750, Method  
2026  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Polarity: As marked  
Mounting position: Any  
Mounting torque: 5 in. - lbs. max  
Weight: 0.08 ounce, 2.24 grams  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25℃ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol MBRF MBRF MBRF MBRF MBRF MBRF Units  
Type Number  
10100  
100  
70  
1035  
35  
1045 1050 1060 1090  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
VRRM  
VRMS  
VDC  
45  
31  
45  
50  
35  
50  
60  
42  
60  
90  
63  
90  
24  
Maximum DC Blocking Voltage  
35  
100  
Maximum Average Forward Rectified Current  
See Fig. 1  
A
A
10  
I(AV)  
IFRM  
Peak Repetitive Forward Current (Square Wave,  
20.0  
20KHz) at Tc=135oC  
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load (JEDEC  
method )  
A
150  
IFSM  
Peak Repetitive Reverse Surge Current (Note 1)  
Voltage Rate of Change (Rated VR)  
A
IRRM  
dV/dt  
1.0  
0.5  
V/uS  
10,000  
Maximum Instantaneous Forward Voltage at  
(Note 2)  
IF=10A, Tc=25OC  
IF=10A, Tc=125OC  
IF=20A, Tc=25OC  
IF=20A, Tc=125OC  
-
0.80  
0.70  
0.95  
0.85  
0.85  
0.71  
-
0.57  
0.84  
0.72  
V
VF  
IR  
-
Maximum Instantaneous Reverse Current  
@ Tc =25℃at Rated DC Blocking Voltage (Note 2)  
@ Tc=125℃  
mA  
mA  
0.1  
15.0  
0.1  
6.0  
Typical Junction Capacitance  
pF  
Cj  
390  
300  
4.0  
220  
Maximum Thermal Resistance, Junction to Case  
(Note 3)  
℃/W  
RθJC  
-65 to +150  
-65 to +175  
℃
℃
Operating Junction Temperature Range  
TJ  
TSTG  
Storage Temperature Range  
Notes: 1. 2.0us Pulse Width, f=1.0 KHz  
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle  
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.  
- 130 -  
12

中文翻译

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