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MBRF1090CT-E3/4W PDF预览

MBRF1090CT-E3/4W

更新时间: 2024-11-21 19:51:51
品牌 Logo 应用领域
威世 - VISHAY 局域网功效瞄准线二极管
页数 文件大小 规格书
5页 89K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 90V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, ITO-220AB, 3 PIN

MBRF1090CT-E3/4W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, ITO-220AB, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.49
其他特性:FREEWHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.75 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:120 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:90 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBRF1090CT-E3/4W 数据手册

 浏览型号MBRF1090CT-E3/4W的Datasheet PDF文件第2页浏览型号MBRF1090CT-E3/4W的Datasheet PDF文件第3页浏览型号MBRF1090CT-E3/4W的Datasheet PDF文件第4页浏览型号MBRF1090CT-E3/4W的Datasheet PDF文件第5页 
New Product  
MBRF1090CT, MBRF10100CT  
Vishay General Semiconductor  
Dual Common-Cathode High Voltage Schottky Rectifier  
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
• Lower power losses, high efficiency  
• Low forward voltage drop  
ITO-220AB  
• High forward surge capability  
• High frequency operation  
• Solder bath temperature 275 °C maximum, 10 s,  
per JESD 22-B106  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
3
2
1
PIN 1  
PIN 3  
PIN 2  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode  
power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
2 x 5.0 A  
MECHANICAL DATA  
Case: ITO-220AB  
90 V, 100 V  
120 A  
VF  
0.75 V  
Molding compound meets UL 94 V-0 flammability  
rating  
TJ max.  
150 °C  
Base P/N-E3 - RoHS compliant, commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
MBRF1090CT MBRF10100CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
90  
90  
90  
100  
100  
100  
V
V
V
total device  
per diode  
10  
5.0  
Maximum average forward rectified current at TC = 105 °C  
IF(AV)  
IFSM  
EAS  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
120  
60  
Non-repetitive avalanche energy  
at TJ = 25 °C, L = 60 mH per diode  
mJ  
A
Peak repetitive reverse current at tp = 2 µs, 1 kHz,  
TJ = 38 °C 2 °C per diode  
IRRM  
0.5  
Voltage rate of change (rated VR)  
dV/dt  
TJ, TSTG  
VAC  
10 000  
- 65 to + 150  
1500  
V/µs  
°C  
Operating junction and storage temperature range  
Isolation voltage from terminal to heatsink with t = 1 min  
V
Document Number: 89126  
Revision: 26-Apr-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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