Datasheet > MBRF10H100CT_11

MBRF10H100CT_11

更新时间： 2024-11-21 11:11:27

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
2页	182K
描述
10.0AMPS Isolated Schottky Barrier Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBRF10H100CT_11 数据手册

CREAT BY ART

MBRF10H100CT - MBRF10H200CT

10.0AMPS Isolated Schottky Barrier Rectifiers

ITO-220AB

RoHS

COMPLIANCE

Features

UL Recognized File # E-326243

Plastic material used carriers Underwriters

Laboratory Classification 94V-0

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Guard-ring for overvoltage protection

High temperature soldering guaranteed:

260℃/10 seconds/.25", (6.35mm) from case

Green compound with suffix "G" on packing

code & prefix "G" on datecode

Dimensions in inches and (millimeters)

Marking Diagram

Mechanical Data

Case: ITO-220AB molded plastic body

MBRF10HXXCT

= Specific Device Code

= Green Compound

= Year

Terminals: Pure tin plated, lead free, solderable

per MIL-STD-750, Method 2026

Polarity: As marked

Mounting position:Any

Mounting torque: 5 in. - lbs, max

Weight: 1.73 grams

= Work Week

Maximum Ratings and Electrical Characteristics

Rating at 25 ℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

MBRF

10H100CT

MBRF

10H150CT

MBRF

Unit

Symbol

Type Number

10H200CT

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum DC Blocking Voltage

100

Maximum Average Forward Rectified Current

at T_C=125℃

I_F(AV)

Peak Repetitive Surge Current (Rated V_R, Square

I_FRM

Wave, 20KHz) at Tc=133℃

Peak Forward Surge Current, 8.3 ms Single Half Sine-

wave Superimposed on Rated Load (JEDEC Method)

I_FSM

I_RRM

120

Peak Repetitive Reverse Surge Current (Note 1)

0.5

Maximum Instantaneous Forward Voltage (Note 2)

IF=5A, T_A=25℃

0.85

0.75

0.95

0.85

0.88

0.75

0.97

0.85

IF=5A, T_A=125℃

V_F

IF=10A, T_A=25℃

IF=10A, T_A=125℃

Maximum Reverse Current @ Rated V_RT_A=25 ℃

I_R

T =125 ℃

Voltage Rate of Change,(Rated V_R)

Typical Thermal Resistance

10000

3.5

dV/dt

R_θjC

T_J

V/us

^OC/W

^OC

Operating Temperature Range

- 65 to + 175

^OC

Storage Temperature Range

T_STG

Note 1: 2.0uS Pulse Width, f=1.0KHz

Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle

Version:E11

中文翻译

下载PDF

与MBRF10H100CT_11相关器件

型号	品牌	获取价格	描述	数据表
MBRF10H100CT_14	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBRF10H100CTC0	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBRF10H100CTC0G	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBRF10H100CT-E3/45	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBRF10H100CTHC0	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBRF10H100CTHE3/45	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBRF10H100CT-HE3/45	VISHAY	获取价格	DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB,
MBRF10H100-E3/45	VISHAY	获取价格	High-Voltage Schottky Rectifier
MBRF10H100HE3/45	VISHAY	获取价格	High-Voltage Schottky Rectifier
MBRF10H100-HE3/45	VISHAY	获取价格	DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC,

与MBRF10H100CT_11相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF10H100CT_11

MBRF10H100CT_11 数据手册

与MBRF10H100CT_11相关器件

与MBRF10H100CT_11相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF10H100CT_11

MBRF10H100CT_11 数据手册

与MBRF10H100CT_11相关器件

与MBRF10H100CT_11相关文章

您还可以找

您在本页遇到什么问题？