Datasheet > MBRF10H150CT

MBRF10H150CT

更新时间： 2024-09-20 12:34:27

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
4页	1568K
描述
Plastic package has Underwriters Laboratory Flammability Classification 94V-0

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中文翻译

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数据手册

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MBRF10H150CT 数据手册

MBR10H150CT, MBRF10H150CT & SB10H150CT-1

Dual Common-Cathode High-Voltage Schottky Rectifier

FEATURES

ITO-220AB

TO-262AA

• Guardring for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

• High frequency operation

• Solder dip 260 °C, 40 s

SB10H150CT-1

MBRF10H150CT

PIN 1

PIN 3

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PIN 2

CASE

TYPICAL APPLICATIONS

For use in high frequency inverters, freewheeling and

polarity protection applications.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-262AA

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

V_F

2 x 5 A

150 V

160 A

0.72 V

175 °C

Mounting Torque: 10 in-lbs maximum

Polarity: As marked

T_J

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR10H150CT

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

V_RRM

150

V_RWM

V_DC

total device

Maximum average forward rectified current (Fig. 1)

per diode

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

I_FSM

160

Peak repetitive reverse current per diode at t_p= 2 µs, 1 kHz

Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)

Non-repetitive avalanche energy per diode at 25 °C, I_AS= 1.5 A, L = 10 mH

Voltage rate of change (rated V_R)

I_RRM

E_RSM

E_AS

1.0

V/µs

°C

11.25

dV/dt

T_J, T_STG

V_AC

10 000

- 65 to + 175

1500

Operating junction and storage temperature range

Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min

www.kersemi.com

12 3 4

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