MBRF1090, MBRF10100
Vishay General Semiconductor
www.vishay.com
High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
TMBS®
ITO-220AC
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• High forward surge capabilty
• High frequency operation
•
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
1
MBRF1090
MBRF10100
PIN 1
TYPICAL APPLICATIONS
PIN 2
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case: ITO-220AC
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
10 A
90 V, 100 V
150 A
VRRM
Base P/N-M3
- halogen-free, RoHS-compliant, and
IFSM
commercial grade
VF at IF = 10 A
TJ max.
0.65 V
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
150 °C
Package
Diode variation
ITO-220AC
Single die
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRF1090
MBRF10100
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRRM
90
90
90
100
100
100
V
V
V
A
VRWM
VDC
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 133 °C
IF(AV)
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Voltage rating of change (rated VR)
dV/dt
VAC
10 000
1500
V/μs
V
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
TJ, TSTG
-65 to +150
°C
Revision: 28-Oct-13
Document Number: 89320
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000