Datasheet > MBRF1090CT_15

MBRF1090CT_15

更新时间： 2024-11-19 01:26:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	83K
描述
Dual High Voltage Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBRF1090CT_15 数据手册

MBRF1090CT, MBRF10100CT

www.vishay.com

Vishay General Semiconductor

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Lower power losses, high efficiency

• Low forward voltage drop

ITO-220AB

• High forward surge capability

• High frequency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

PIN 1

PIN 3

PIN 2

For use in high frequency rectifier of switching mode power

supplies, freewheeling diodes, DC/DC converters or polarity

protection application.

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: ITO-220AB

I_F(AV)

2 x 5.0 A

90 V, 100 V

120 A

Molding compound meets UL 94 V-0 flammability rating

V_RRM

Base P/N-M3

- halogen-free, RoHS-compliant, and

I_FSM

commercial grade

V_F

0.75 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

T_Jmax.

Package

150 °C

ITO-220AB

Diode variations

Common cathode

Polarity: As marked

Mounting Torque: 10 in-lbs max.

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

MBRF1090CT MBRF10100CT

UNIT

Max. repetitive peak reverse voltage

Working peak reverse voltage

100

V_RWM

V_DC

Max. DC blocking voltage

total device

Max. average forward rectified current at T_C= 105 °C

per diode

I_F(AV)

5.0

Peak forward surge current 8.3 ms single half sine-wave 

I_FSM

E_AS

120

superimposed on rated load per diode

Non-repetitive avalanche energy 

at T_J= 25 °C, L = 60 mH per diode

Peak repetitive reverse current at t_p= 2 μs, 1 kHz, 

T_J= 38 °C 2 °C per diode

I_RRM

0.5

Voltage rate of change (rated V_R)

dV/dt

T_J, T_STG

V_AC

10 000

- 65 to + 150

1500

V/μs

°C

Operating junction and storage temperature range

Isolation voltage from terminal to heatsink with t = 1 min

Revision: 16-Aug-13

Document Number: 89126

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与MBRF1090CT_15相关器件

型号	品牌	获取价格	描述	数据表
MBRF1090CT-E3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 90V V(RRM), Silicon, TO-220AB, ROHS COM
MBRF1090CT-M3/4W	VISHAY	获取价格	暂无描述
MBRF1090-E3/45	VISHAY	获取价格	DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC,
MBRF1090-E3/4W	VISHAY	获取价格	DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC,
MBRF1090-HE3/45	VISHAY	获取价格	DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC,
MBRF10H	VISHAY	获取价格	Schottky Barrier Rectifiers
MBRF10H100	KERSEMI	获取价格	Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
MBRF10H100	VISHAY	获取价格	High Voltage Schottky Rectifiers
MBRF10H1000CT	KERSEMI	获取价格	Plastic package has Underwriters Laboratory Flammability Classification 94V-0
MBRF10H100CT	LGE	获取价格	Isolated 10.0AMP.Schottky Barrier Rectifiers

与MBRF1090CT_15相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF1090CT_15

MBRF1090CT_15 数据手册

与MBRF1090CT_15相关器件

与MBRF1090CT_15相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF1090CT_15

MBRF1090CT_15 数据手册

与MBRF1090CT_15相关器件

与MBRF1090CT_15相关文章

您还可以找

您在本页遇到什么问题？