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MBRF1090 PDF预览

MBRF1090

更新时间: 2024-01-12 08:50:18
品牌 Logo 应用领域
科盛美 - KERSEMI 二极管瞄准线功效局域网
页数 文件大小 规格书
4页 1967K
描述
Trench MOS Schottky technology

MBRF1090 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
Is Samacsys:N二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.85 V最大非重复峰值正向电流:120 A
最高工作温度:150 °C最大输出电流:5 A
最大重复峰值反向电压:90 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
Base Number Matches:1

MBRF1090 数据手册

 浏览型号MBRF1090的Datasheet PDF文件第2页浏览型号MBRF1090的Datasheet PDF文件第3页浏览型号MBRF1090的Datasheet PDF文件第4页 
MBR(F,B)1090 & MBR(F,B)10100  
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
TO-220AC  
ITO-220AC  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
1
1
MBR1090  
MBR10100  
PIN 1  
MBRF1090  
MBRF10100  
PIN 1  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
CASE  
PIN 2  
PIN 2  
TO-263AB  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
K
2
TYPICAL APPLICATIONS  
1
For use in high frequency rectifier of switching mode  
power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
MBRB1090  
MBRB10100  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-220AC, ITO-220AC, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
IF(AV)  
10 A  
VRRM  
IFSM  
90 V, 100 V  
150 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for commercial grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked  
VF  
0.65 V  
TJ max.  
150 °C  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
VRRM  
VRWM  
VDC  
MBR1090  
MBR10100  
100  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
90  
90  
90  
V
V
V
A
100  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current at TC = 133 °C  
IF(AV)  
10  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Peak repetitive reverse current at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
0.5  
A
10 000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 150  
1500  
Isolation voltage (ITO-220AC only)  
From terminal to heatsink t = 1 min  
VAC  
V
www.kersemi.com  
476  

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Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 90V V(RRM), Silicon, TO-220AB, ROHS COM