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MBRF1060CT PDF预览

MBRF1060CT

更新时间： 2024-02-11 17:36:02
品牌 Logo 应用领域
科盛美 - KERSEMI 二极管瞄准线功效局域网
页数 文件大小 规格书
2页 894K
描述
Plastic material used carries Underwriters Laboratory Classifications 94V-0

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MBRF1060CT 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ITO-220AB, 3 PINReach Compliance Code：compliant
风险等级：5.23其他特性：FREE WHEELING DIODE
应用：GENERAL PURPOSE外壳连接：ISOLATED
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.7 V
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
最大非重复峰值正向电流：125 A元件数量：2
相数：1端子数量：3
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT最大重复峰值反向电压：60 V
最大反向电流：1000 µA表面贴装：NO
技术：SCHOTTKY端子形式：THROUGH-HOLE
端子位置：SINGLEBase Number Matches：1

MBRF1060CT 数据手册

 浏览型号MBRF1060CT的Datasheet PDF文件第2页 
MBRF1035CT - MBRF10150CT  
ITO-220AB  
Features  
ꢀ
Plastic material used carries Underwriters Laboratory  
Classifications 94V-0  
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Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications  
Guardring for overvoltage protection  
ꢀ
ꢀ
High temperature soldering guaranteed:  
260oC/10 seconds,0.25”(6.35mm)from case  
Mechanical Data  
ꢀ
Cases: ITO-220AB molded plastic  
Terminals: Pure tin plated, lead free. solderable per  
MIL-STD-750, Method 2026  
ꢀ
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Polarity: As marked  
Mounting position: Any  
Mounting torque: 5 in. - lbs. max  
Weight: 0.08 ounce, 2.24 grams  
Maximum Ratings and Electrical Characteristics  
Rating at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBRF MBRF MBRF MBRF MBRF MBRF MBRF  
1035 1045 1050 1060 1090 10100 10150  
Symbol  
Units  
Type Number  
CT  
35  
24  
35  
CT  
45  
31  
45  
CT  
50  
35  
50  
CT  
60  
42  
60  
CT  
90  
63  
90  
CT  
100  
70  
CT  
150  
105  
150  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
at TC=133oC  
VRRM  
VRMS  
VDC  
V
V
V
100  
I(AV)  
10  
A
Peak Repetitive Forward Current (Rated VR,  
Square Wave, 20KHz) at Tc=133oC  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
Peak Repetitive Reverse Surge Current  
(Note 1)  
IFRM  
10.0  
A
IFSM  
IRRM  
120  
0.5  
A
A
Maximum Instantaneous Forward Voltage at  
(Note 2)  
I = 5A, Tc=25oC  
0.70  
0.57  
0.80  
0.67  
0.80  
0.85  
0.75  
0.95  
0.85  
0.88  
0.78  
0.98  
0.88  
F
I = 5A, Tc=125oC  
VF  
0.65  
0.90  
0.75  
V
F
I =10A, Tc=25oC  
F
I =10A, Tc=125oC  
F
Maximum Instantaneous Reverse Current  
at Rated DC Blocking Voltage @Tc=25 oC  
@ Tc=125 oC  
0.1  
mA  
mA  
IR  
0.1  
5.0  
15  
10  
Voltage Rate of Change, (Rated VR)  
RMS Isolation Voltage (t=1.0 second, R.H.  
dV/dt  
10,000  
V/uS  
≦30%, TA=25 oC)  
(Note 4)  
(Note 5)  
(Note 6)  
4500  
3500  
1500  
VISO  
V
Typical Thermal Resistance Per Leg (Note3)  
Operating Junction Temperature Range  
Storage Temperature Range  
R
3.5  
-65 to +150  
-65 to +150  
oC/W  
oC  
θJC  
TJ  
T
STG  
oC  
1. 2.0 us Pulse Width, f=1.0 KHz  
3. Thermal Resistance from Junction to Case Per Leg.  
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle  
Notes:  
4. Clip Mounting (on case), where lead does not overlap heatsink with 0.110” offset.  
5. Clip mounting (on case), where leads do overlap heatsink.  
6. Screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19”)  
<
=
www.kersemi.com  
12

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