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MBRA120ET3 PDF预览

MBRA120ET3

更新时间: 2024-09-22 21:55:11
品牌 Logo 应用领域
安森美 - ONSEMI 二极管光电二极管
页数 文件大小 规格书
4页 47K
描述
Surface Mount Schottky Power Rectifier 1 AMPERE 20 VOLTS

MBRA120ET3 技术参数

是否无铅: 含铅生命周期:End Of Life
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.98
其他特性:FREE WHEELING DIODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.36 VJESD-30 代码:R-PDSO-C2
JESD-609代码:e0湿度敏感等级:1
最大非重复峰值正向电流:40 A元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240认证状态:Not Qualified
最大重复峰值反向电压:20 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

MBRA120ET3 数据手册

 浏览型号MBRA120ET3的Datasheet PDF文件第2页浏览型号MBRA120ET3的Datasheet PDF文件第3页浏览型号MBRA120ET3的Datasheet PDF文件第4页 
MBRA120ET3  
Surface Mount  
Schottky Power Rectifier  
SMA Power Surface Mount Package  
. . . employing the Schottky Barrier principle in a metal−to−silicon  
power rectifier. Features epitaxial construction with oxide passivation  
and metal overlay contact. Ideally suited for low voltage, high  
frequency switching power supplies; free wheeling diodes and  
polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
Compact Package with J−Bend Leads Ideal for Automated Handling  
Highly Stable Oxide Passivated Junction  
Guardring for Over−Voltage Protection  
1 AMPERE  
20 VOLTS  
Optimized for Low Leakage Current  
Mechanical Characteristics:  
MARKING  
DIAGRAM  
Case: Molded Epoxy  
Epoxy Meets UL94, V at 1/8  
O
Weight: 70 mg (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
B1E2  
SMA  
CASE 403D  
PLASTIC  
B1E2 = Device Code  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Polarity: Polarity Band Indicates Cathode Lead  
Available in 12 mm Tape, 5000 Units per 13 inch Reel  
Device Meets MSL1 Requirements  
ORDERING INFORMATION  
ESD Ratings: Machine Model, C (>400 V)  
Human Body Model, 3B (>8000 V)  
Marking: B1E2  
Device  
Package  
Shipping  
MBRA120ET3  
SMA  
5000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
20  
V
RRM  
RWM  
R
Average Rectified Forward Current  
I
1.0  
40  
A
A
O
(At Rated V , T = 125°C)  
R
C
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
Storage Temperature  
T
−55 to +150  
−55 to +150  
10,000  
°C  
°C  
stg  
Operating Junction Temperature  
Voltage Rate of Change  
T
J
dv/dt  
V/ms  
(Rated V , T = 25°C)  
R
J
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
December, 2003 − Rev. 2  
MBRA120ET3/D  

MBRA120ET3 替代型号

型号 品牌 替代类型 描述 数据表
MBRA120ET3G ONSEMI

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