MBRA140T3
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
. . . employing the Schottky Barrier principle in a large area
metal–to–silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
40 VOLTS
• Small Compact Surface Mountable Package with J–Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Guardring for Stress Protection
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
SMA
CASE 403D
PLASTIC
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MARKING DIAGRAM
B14
• Shipped in 12 mm tape, 5000 units per 13 inch reel
• Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or
Polarity Band
• Marking: B14
B14 = Device Code
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
40
V
RRM
RWM
R
ORDERING INFORMATION
V
Device
MBRA140T3
Package
Shipping
5000/Tape & Reel
Average Rectified Forward Current
I
O
1.0
2.0
A
A
SMA
(At Rated V , T = 95°C)
R
C
Peak Repetitive Forward Current
(At Rated V , Square Wave,
I
FRM
R
20 kHz, T = 100°C)
C
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
30
A
FSM
Storage/Operating Case
Temperature
T
stg
, T
–55 to +150
°C
C
Operating Junction Temperature
Voltage Rate of Change
T
–55 to +125
10,000
°C
J
dv/dt
V/ms
(Rated V , T = 25°C)
R
J
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
April, 2002 – Rev. 5
MBRA140T3/D