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MBRA140 PDF预览

MBRA140

更新时间: 2024-11-17 22:51:27
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 76K
描述
Surface Mount Schottky Power Rectifier

MBRA140 数据手册

 浏览型号MBRA140的Datasheet PDF文件第2页浏览型号MBRA140的Datasheet PDF文件第3页浏览型号MBRA140的Datasheet PDF文件第4页 
MBRA140T3  
Surface Mount  
Schottky Power Rectifier  
SMA Power Surface Mount Package  
. . . employing the Schottky Barrier principle in a large area  
metal–to–silicon power diode. State of the art geometry features  
epitaxial construction with oxide passivation and metal overlay  
contact. Ideally suited for low voltage, high frequency rectification, or  
as free wheeling and polarity diodes in surface mount applications  
where compact size and weight are critical to the system.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
1.0 AMPERES  
40 VOLTS  
Small Compact Surface Mountable Package with J–Bent Leads  
Rectangular Package for Automated Handling  
Highly Stable Oxide Passivated Junction  
Very Low Forward Voltage Drop  
Guardring for Stress Protection  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 70 mg (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
SMA  
CASE 403D  
PLASTIC  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
MARKING DIAGRAM  
B14  
Shipped in 12 mm tape, 5000 units per 13 inch reel  
Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or  
Polarity Band  
Marking: B14  
B14 = Device Code  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
40  
V
RRM  
RWM  
R
ORDERING INFORMATION  
V
Device  
MBRA140T3  
Package  
Shipping  
5000/Tape & Reel  
Average Rectified Forward Current  
I
O
1.0  
2.0  
A
A
SMA  
(At Rated V , T = 95°C)  
R
C
Peak Repetitive Forward Current  
(At Rated V , Square Wave,  
I
FRM  
R
20 kHz, T = 100°C)  
C
Non–Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, Single  
Phase, 60 Hz)  
I
30  
A
FSM  
Storage/Operating Case  
Temperature  
T
stg  
, T  
–55 to +150  
°C  
C
Operating Junction Temperature  
Voltage Rate of Change  
T
–55 to +125  
10,000  
°C  
J
dv/dt  
V/ms  
(Rated V , T = 25°C)  
R
J
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2002 – Rev. 5  
MBRA140T3/D  

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