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MBRA140T3

更新时间: 2024-11-20 22:51:27
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
4页 139K
描述
Surface Mount Schottky Power Rectifier

MBRA140T3 技术参数

生命周期:Transferred包装说明:R-PDSO-J2
针数:2Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.17
其他特性:FREE WHEELING DIODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-J2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子位置:DUALBase Number Matches:1

MBRA140T3 数据手册

 浏览型号MBRA140T3的Datasheet PDF文件第2页浏览型号MBRA140T3的Datasheet PDF文件第3页浏览型号MBRA140T3的Datasheet PDF文件第4页 
Order this document  
by MBRA140T3/D  
SEMICONDUCTOR TECHNICAL DATA  
SCHOTTKY BARRIER  
RECTIFIER  
SMA Power Surface Mount Package  
. . . employing the Schottky Barrier principle in a large area metal–to–silicon  
power diode. State of the art geometry features epitaxial construction with oxide  
passivation and metal overlay contact. Ideally suited for low voltage, high  
frequency rectification, or as free wheeling and polarity diodes in surface mount  
applications where compact size and weight are critical to the system.  
1 AMPERES  
40 VOLTS  
Small Compact Surface Mountable Package with J–Bent Leads  
Rectangular Package for Automated Handling  
Highly Stable Oxide Passivated Junction  
Very Low Forward Voltage Drop  
Guardring for Stress Protection  
Mechanical Characteristics:  
Case: Epoxy, Molded  
CASE 403B-01  
SMA  
Weight: 70 mg (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are  
Readily Solderable  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Shipped in 12 mm tape, 5000 units per 13 inch reel  
Polarity: Notch in Plastic Body Indicates Cathode Lead  
Marking: B4  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
40  
V
RRM  
RWM  
R
V
Average Rectified Forward Current (At Rated V , T = 95°C)  
I
1.0  
2.0  
A
A
R
C
O
Peak Repetitive Forward Current  
I
FRM  
(At Rated V , Square Wave, 20 kHz, T = 100°C)  
R
C
Non-Repetitive Peak Surge Current  
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)  
I
30  
A
FSM  
Storage/Operating Case Temperature  
T
T
55 to +150  
55 to +125  
10,000  
°C  
°C  
stg,  
C
Operating Junction Temperature  
T
J
Voltage Rate of Change (Rated V , T = 25°C)  
dv/dt  
V/µs  
R
J
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction–to–Lead (2)  
Thermal Resistance — Junction–to–Ambient (2)  
R
35  
86  
°C/W  
tjl  
R
tja  
ELECTRICAL CHARACTERISTICS  
Maximum Instantaneous Forward Voltage (1), see Figure 2 for other Values  
V
F
V
T = 25°C T = 100°C  
J
J
(I = 1.0 A)  
F
0.55  
0.71  
0.505  
0.74  
(I = 2.0 A)  
F
Maximum Instantaneous Reverse Current, see Figure 4 for other Values  
I
R
mA  
T = 25°C T = 100°C  
J
J
(V = 40 V)  
R
0.5  
0.1  
10  
2.0  
(V = 20 V)  
R
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.  
(1) Pulse Test: Pulse Width 250 µs, Duty Cycle 2%.  
(2) Mounted on 2square pc board with 1square total pad size, PC Board FR4.  
REV 2  
Motorola, Inc. 1996  

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