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MBRA120LT3 PDF预览

MBRA120LT3

更新时间: 2024-01-27 09:12:40
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 46K
描述
Surface Mount Schottky Power Rectifier

MBRA120LT3 数据手册

 浏览型号MBRA120LT3的Datasheet PDF文件第2页浏览型号MBRA120LT3的Datasheet PDF文件第3页浏览型号MBRA120LT3的Datasheet PDF文件第4页 
MBRA120LT3  
Surface Mount  
Schottky Power Rectifier  
SMA Power Surface Mount Package  
. . . employing the Schottky Barrier principle in a metal–to–silicon  
power rectifier. Features epitaxial construction with oxide passivation  
and metal overlay contact. Ideally suited for low voltage, high  
frequency switching power supplies; free wheeling diodes and  
polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
Compact Package with J–Bend Leads Ideal for Automated Handling  
Highly Stable Oxide Passivated Junction  
Guardring for Over–Voltage Protection  
1 AMPERE  
20 VOLTS  
Optimized for Low Leakage Current  
Mechanical Characteristics:  
MARKING  
DIAGRAM  
Case: Molded Epoxy  
Epoxy Meets UL94, V at 1/8  
O
Weight: 70 mg (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
B1L2  
SMA  
CASE 403D  
PLASTIC  
B1L2 = Device Code  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Polarity: Polarity Band Indicates Cathode Lead  
Available in 12 mm Tape, 5000 Units per 13 inch Reel  
ORDERING INFORMATION  
ESD Protection: Human Body Model > 4000 V (Class 3)  
ESD Protection: Machine Model > 400 V (Class C)  
Marking: B1L2  
Device  
Package  
Shipping  
MBRA120LT3  
SMA  
5000/Tape & Reel  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
20  
V
RRM  
RWM  
R
V
Average Rectified Forward Current  
I
1.0  
40  
A
A
O
(At Rated V , T = 110°C)  
R
L
Non–Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
Storage/Operating Case Temperature  
Operating Junction Temperature  
T
, T  
–55 to  
+125  
°C  
stg  
C
T
J
Voltage Rate of Change  
dv/dt  
10,000  
V/ms  
(Rated V , T = 25°C)  
R
J
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2002 – Rev. 1  
MBRA120LT3/D  

MBRA120LT3 替代型号

型号 品牌 替代类型 描述 数据表
SS12 FAIRCHILD

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