MBRA120LT3
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal–to–silicon
power rectifier. Features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies; free wheeling diodes and
polarity protection diodes.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
• Compact Package with J–Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over–Voltage Protection
1 AMPERE
20 VOLTS
• Optimized for Low Leakage Current
Mechanical Characteristics:
MARKING
DIAGRAM
• Case: Molded Epoxy
• Epoxy Meets UL94, V at 1/8″
O
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
B1L2
SMA
CASE 403D
PLASTIC
B1L2 = Device Code
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Polarity Band Indicates Cathode Lead
• Available in 12 mm Tape, 5000 Units per 13 inch Reel
ORDERING INFORMATION
• ESD Protection: Human Body Model > 4000 V (Class 3)
ESD Protection: Machine Model > 400 V (Class C)
• Marking: B1L2
Device
Package
Shipping
MBRA120LT3
SMA
5000/Tape & Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
20
V
RRM
RWM
R
V
Average Rectified Forward Current
I
1.0
40
A
A
O
(At Rated V , T = 110°C)
R
L
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
Storage/Operating Case Temperature
Operating Junction Temperature
T
, T
–55 to
+125
°C
stg
C
T
J
Voltage Rate of Change
dv/dt
10,000
V/ms
(Rated V , T = 25°C)
R
J
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
April, 2002 – Rev. 1
MBRA120LT3/D