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SS12 PDF预览

SS12

更新时间: 2024-11-17 22:21:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 237K
描述
1.0 Ampere Schottky Barrier Rectifiers

SS12 数据手册

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SS12 - S100  
Features  
Glass passivated junctions.  
High current capability, low VF.  
For use in low voltage, high  
frequency inverters free  
wheeling, and polarity  
SMA/DO-214AC  
COLOR BAND DENOTES CATHODE  
protection applications.  
1.0 Ampere Schottky Barrier Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
IF(AV)  
Parameter  
Value  
1.0  
Units  
A
Average Rectified Current  
.375 " lead length @ TA = 75°C  
Non-repetitive Peak Forward Surge Current  
8.3 ms single half-sine-wave  
IFSM  
PD  
40  
A
Superimposed on rated load (JEDEC method)  
Total Device Dissipation  
1.1  
11  
88  
W
Derate above 25°C  
mW/°C  
°C/W  
Thermal Resistance, Junction to Ambient **  
RθJA  
Tstg  
TJ  
Storage Temperature Range  
Operating Junction Temperature  
-65 to +150  
-65 to +125  
°C  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
**Device mounted on FR-4 PCB 0.013 mm.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Device  
Units  
12 13 14 15 16 18 19 100  
20 30 40 50 60 80 90 100  
14 21 28 35 42 56 64 71  
20 30 40 50 60 80 90 100  
VRRM  
VRMS  
VR  
Maximum Repetitive Reverse Voltage  
Maximum RMS Voltage  
DC Reverse Voltage (Rated VR)  
V
V
V
IRM  
Maximum Instantaneous Reverse Current  
0.2  
mA  
10  
mA  
TA = 25°C (Note 1) @ rated VR  
TA = 100°C  
VFM  
Maximum Instantaneous Forward Voltage @ 1.0 A  
500  
700  
850  
mV  
Note: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%  
SS12-S100, Rev. A1  
2001 Fairchild Semiconductor Corporation  

SS12 替代型号

型号 品牌 替代类型 描述 数据表
MBRA120ET3G ONSEMI

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