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SS12_NL

更新时间: 2024-11-21 19:20:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管
页数 文件大小 规格书
5页 140K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, LEAD FREE, DO-214AC

SS12_NL 技术参数

生命周期:Obsolete零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.58
其他特性:FREE WHEELING DIODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:1.1 W认证状态:Not Qualified
最大重复峰值反向电压:20 V表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

SS12_NL 数据手册

 浏览型号SS12_NL的Datasheet PDF文件第2页浏览型号SS12_NL的Datasheet PDF文件第3页浏览型号SS12_NL的Datasheet PDF文件第4页浏览型号SS12_NL的Datasheet PDF文件第5页 
June 2003  
BSS123  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
Features  
General Description  
These N-Channel enhancement mode field effect  
transistors are produced using Fairchild’s proprietary,  
high cell density, DMOS technology. These products  
have been designed to minimize on-state resistance  
while provide rugged, reliable, and fast switching  
performance.These products are particularly suited for  
low voltage, low current applications such as small  
servo motor control, power MOSFET gate drivers, and  
other switching applications.  
·
0.17 A, 100 V. RDS(ON) = 6W @ VGS = 10 V  
RDS(ON) = 10W @ VGS = 4.5 V  
High density cell design for extremely low RDS(ON)  
Rugged and Reliable  
·
·
·
Compact industry standard SOT-23 surface mount  
package  
D
D
S
S
G
G
SOT-23  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
100  
Units  
V
V
A
VGSS  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
±20  
ID  
(Note 1)  
(Note 1)  
0.17  
0.68  
Maximum Power Dissipation  
Derate Above 25°C  
0.36  
PD  
W
mW/°C  
2.8  
TJ, TSTG  
TL  
Operating and Storage Junction Temperature Range  
- 55 to +150  
°C  
Maximum Lead Temperature for Soldering  
Purposes, 1/16” from Case for 10 Seconds  
300  
350  
Thermal Characteristics  
RqJA  
Thermal Resistance, Junction-to-Ambient  
(Note 1)  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
SA  
BSS123  
7’’  
8mm  
3000 units  
BSS123 Rev G(W)  
Ó2003 Fairchild Semiconductor Corporation  

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