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MBRA130LT3

更新时间： 2024-11-19 22:36:03
品牌 Logo 应用领域
安森美 - ONSEMI 二极管光电二极管
页数 文件大小 规格书
4页 78K
描述
Surface Mount Schottky Power Rectifier

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中文翻译

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MBRA130LT3 技术参数

是否无铅： 含铅生命周期：End Of Life
包装说明：R-PDSO-J2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：6.13
其他特性：FREE WHEELING DIODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.71 VJESD-30 代码：R-PDSO-J2
JESD-609代码：e0湿度敏感等级：1
最大非重复峰值正向电流：25 A元件数量：1
端子数量：2最高工作温度：125 °C
最低工作温度：-55 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
认证状态：Not Qualified最大重复峰值反向电压：30 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：Tin/Lead (Sn/Pb)
端子形式：J BEND端子位置：DUAL
处于峰值回流温度下的最长时间：30Base Number Matches：1

MBRA130LT3 数据手册

 浏览型号MBRA130LT3的Datasheet PDF文件第2页浏览型号MBRA130LT3的Datasheet PDF文件第3页浏览型号MBRA130LT3的Datasheet PDF文件第4页 
MBRA130LT3  
Surface Mount Schottky  
Power Rectifier  
SMA Power Surface Mount Package  
This device employs the Schottky Barrier principle in a  
metal−to−siliconpower rectifier. Features epitaxial construction with  
oxide passivation and metal overlay contact. Ideally suited for low  
voltage, high frequency switching power supplies; free wheeling  
diodes and polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
1.0 AMPERES, 30 VOLTS  
Features  
• Compact Package with J−Bend Leads Ideal for Automated Handling  
• Highly Stable Oxide Passivated Junction  
• Guardring for Over−Voltage Protection  
• Low Forward Voltage Drop  
• Pb−Free Package is Available  
Mechanical Characteristics:  
• Case: Molded Epoxy  
SMA  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• Weight: 70 mg (approximately)  
CASE 403D  
PLASTIC  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
MARKING DIAGRAM  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
• Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or  
Polarity Band  
B1L3  
ALYW  
• Available in 12 mm Tape, 5000 Units per 13 inch Reel, Add “T3”  
Suffix to Part Number  
• Device Meets MSL1 Requirements  
B1L3  
A
L
Y
W
= Device Code  
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
• ESD Ratings:  
Machine Model, C (>400 V)  
Human Body Model, 3B (>8000 V)  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
30  
V
RRM  
RWM  
ORDERING INFORMATION  
R
†
Device  
Package  
Shipping  
Average Rectified Forward Current  
I
O
1.0  
2.0  
A
A
(At Rated V , T = 105°C)  
R
C
MBRA130LT3  
SMA  
5000/Tape & Reel  
5000/Tape & Reel  
Peak Repetitive Forward Current  
I
FRM  
(At Rated V , Square Wave, 100 kHz,  
MBRA130LT3G  
SMA  
R
(Pb−Free)  
T
C
= 105°C)  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
25  
A
FSM  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Storage Temperature  
T
−55 to +150  
−55 to +125  
10,000  
°C  
°C  
stg  
Operating Junction Temperature  
T
J
Voltage Rate of Change, (Rated V , T = 25°C)  
dv/dt  
V/ms  
R
J
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
February, 2005 − Rev. 7  
MBRA130LT3/D  
1234

中文翻译

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MBRA130LT3 替代型号

型号 品牌 替代类型 描述 数据表
MBRS130T3 ONSEMI

完全替代

 Surface Mount Schottky Power Rectifier
MBRS130T3G ONSEMI

类似代替

 Surface Mount Schottky Power Rectifier
MBRA130LT3G ONSEMI

类似代替

 Surface Mount Schottky Power Rectifier

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