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MBRS130T3G PDF预览

MBRS130T3G

更新时间： 2024-01-19 10:25:38
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管光电二极管
页数 文件大小 规格书
3页 68K
描述
Surface Mount Schottky Power Rectifier

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中文翻译

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MBRS130T3G 技术参数

是否无铅： 含铅生命周期：Active
零件包装代码：DO-214包装说明：LEAD FREE, PLASTIC, CASE 403A-03, SMB, 2 PIN
针数：2Reach Compliance Code：unknown
风险等级：5.65其他特性：FREE WHEELING DIODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：NOT SPECIFIED元件数量：1
端子数量：2最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：COMMERCIAL最大重复峰值反向电压：30 V
表面贴装：YES技术：SCHOTTKY
端子面层：MATTE TIN端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

MBRS130T3G 数据手册

 浏览型号MBRS130T3G的Datasheet PDF文件第2页浏览型号MBRS130T3G的Datasheet PDF文件第3页 
MBRS130T3  
Preferred Device  
Surface Mount  
Schottky Power Rectifier  
This device employs the Schottky Barrier principle in a large area  
metal-to-silicon power diode. State-of-the-art geometry features  
epitaxial construction with oxide passivation and metal overlay  
contact. Ideally suited for low voltage, high frequency rectification, or  
as free wheeling and polarity protection diodes in surface mount  
applications where compact size and weight are critical to the system.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
Features  
1.0 AMPERE  
30 VOLTS  
•ꢀSmall Compact Surface Mountable Package with J-Bend Leads  
•ꢀRectangular Package for Automated Handling  
•ꢀHighly Stable Oxide Passivated Junction  
•ꢀVery Low Forward Voltage Drop (0.6 Volts Max @ 1.0 A, T = 25°C)  
J
•ꢀExcellent Ability to Withstand Reverse Avalanche Energy Transients  
•ꢀGuardring for Stress Protection  
•ꢀPb-Free Package is Available  
SMB  
CASE 403A  
PLASTIC  
Mechanical Characteristics  
•ꢀCase: Epoxy, Molded  
•ꢀWeight: 95 mg (approximately)  
MARKING DIAGRAM  
•ꢀFinish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
AYWW  
B13G  
G
•ꢀLead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
•ꢀShipped in 12 mm Tape and Reel, 2500 units per reel  
•ꢀCathode Polarity Band  
A
= Assembly Location  
= Year  
= Work Week  
Y
WW  
G
MAXIMUM RATINGS  
= Pb-Free Package  
(Note: Microdot may be in either location)  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
30  
V
RRM  
V
RWM  
V
R
ORDERING INFORMATION  
Average Rectified Forward Current  
(T = 115°C)  
I
1.0  
40  
A
A
F(AV)  
†
Device  
Package  
Shipping  
L
MBRS130T3  
MBRS130T3G  
SMB  
2500/Tape & Reel  
2500/Tape & Reel  
Non-Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
SMB  
(Pb-Free)  
Operating Junction Temperature  
T
-65 to +125  
°C  
J
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
THERMAL CHARACTERISTICS  
Preferred devices are recommended choices for future use  
Rating  
Symbol  
Value  
Unit  
and best overall value.  
Thermal Resistance, Junction-to-Lead  
(T = 25°C)  
R
q
JL  
12  
°C/W  
L
©ꢀ Semiconductor Components Industries, LLC, 2007  
August, 2007 - Rev. 7  
1
Publication Order Number:  
MBRS130T3/D  
123

中文翻译

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MBRS130T3G 替代型号

型号 品牌 替代类型 描述 数据表
MBRS130T3 ONSEMI

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