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MBRS140LT3 PDF预览

MBRS140LT3

更新时间: 2024-02-29 23:18:05
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管光电二极管
页数 文件大小 规格书
8页 103K
描述
Surface Mount Schottky Power Rectifier

MBRS140LT3 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.19
其他特性:FREE WHEELING DIODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.425 VJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:40 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

MBRS140LT3 数据手册

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MBRS140LT3  
Surface Mount  
Schottky Power Rectifier  
SMB Power Surface Mount Package  
. . . employing the Schottky Barrier principle in a metal–to–silicon  
power rectifier. Features epitaxial construction with oxide passivation  
and metal overlay contact. Ideally suited for low voltage, high  
frequency switching power supplies; free wheeling diodes and  
polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
Compact Package with J–Bend Leads Ideal for Automated Handling  
Highly Stable Oxide Passivated Junction  
Guardring for Over–Voltage Protection  
1.0 AMPERE  
40 VOLTS  
Low Forward Voltage Drop  
Mechanical Characteristics:  
Case: Molded Epoxy  
Epoxy Meets UL94, VO at 1/8  
Weight: 95 mg (approximately)  
Cathode Polarity Band  
SMB  
CASE 403A  
PLASTIC  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Available in 12 mm Tape, 2500 Units per 13Reel, Add “T3” Suffix  
to Part Number  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
MARKING DIAGRAM  
Marking: B14L  
B14L  
MAXIMUM RATINGS  
B14L = Device Code  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
40  
V
RRM  
RWM  
R
ORDERING INFORMATION  
Average Rectified Forward Current  
I
O
1.0  
2.0  
A
A
(At Rated V , T = 110°C)  
Device  
MBRS140LT3  
Package  
Shipping  
2500/Tape & Reel  
R
C
Peak Repetitive Forward Current  
(At Rated V , Square Wave,  
I
FRM  
SMB  
R
100 kHz, T = 110°C)  
C
Non–Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, Single  
Phase, 60 Hz)  
I
40  
A
FSM  
Storage/Operating Case  
Temperature  
T
stg  
, T  
C
–55 to +150  
°C  
Operating Junction Temperature  
Voltage Rate of Change  
T
–55 to +125  
10,000  
°C  
J
dv/dt  
V/ms  
(Rated V , T = 25°C)  
R
J
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
October, 2000 – Rev. 2  
MBRS140LT3/D  

MBRS140LT3 替代型号

型号 品牌 替代类型 描述 数据表
MBRA140T3G ONSEMI

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