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MBRS1540T3 PDF预览

MBRS1540T3

更新时间： 2024-01-20 01:55:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 66K
描述
Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package

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中文翻译

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MBRS1540T3 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：DO-214包装说明：SMB, 2 PIN
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：8 weeks风险等级：1.07
其他特性：FREE WHEELING DIODE应用：POWER
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.54 V
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：40 A元件数量：1
相数：1端子数量：2
最高工作温度：125 °C最低工作温度：-65 °C
最大输出电流：1.5 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大重复峰值反向电压：40 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子面层：Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

MBRS1540T3 数据手册

 浏览型号MBRS1540T3的Datasheet PDF文件第2页浏览型号MBRS1540T3的Datasheet PDF文件第3页浏览型号MBRS1540T3的Datasheet PDF文件第4页浏览型号MBRS1540T3的Datasheet PDF文件第5页 
MBRS1540T3  
Surface Mount  
Schottky Power Rectifier  
SMB Power Surface Mount Package  
These devices employ the Schottky Barrier principle in a  
metal−to−silicon power rectifier. Features epitaxial construction with  
oxide passivation and metal overlay contact. Ideally suited for low  
voltage, high frequency switching power supplies; free wheeling  
diodes and polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
1.5 AMPERES, 40 VOLTS  
Features  
• Compact Package with J−Bend Leads Ideal for Automated Handling  
• Highly Stable Oxide Passivated Junction  
• Guard−Ring for Over−Voltage Protection  
• Low Forward Voltage Drop  
• Pb−Free Package is Available  
SMB  
CASE 403A  
PLASTIC  
Mechanical Characteristics  
• Case: Molded Epoxy  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• Weight: 95 mg (Approximately)  
• Cathode Polarity Band  
MARKING DIAGRAM  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
AYWW  
BGJG  
G
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
BGJ  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
40  
V
RRM  
RWM  
R
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
Average Rectified Forward Current  
I
1.5  
3.0  
A
A
O
(At Rated V , T = 100°C)  
R
C
Peak Repetitive Forward Current  
I
FRM  
(At Rated V , Square Wave,  
R
ORDERING INFORMATION  
100 kHz, T = 105°C)  
C
†
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
40  
A
FSM  
Device  
Package  
Shipping  
MBRS1540T3  
SMB  
2500/Tape & Reel  
MBRS1540T3G  
SMB  
(Pb−Free)  
2500/Tape & Reel  
Storage/Operating Case Temperature  
Operating Junction Temperature  
T
, T  
−55 to +150  
−55 to +125  
10,000  
°C  
°C  
stg  
C
T
J
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Voltage Rate of Change  
dv/dt  
V/ms  
(Rated V , T = 25°C)  
R
J
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2005 − Rev. 3  
MBRS1540T3/D  
12345

中文翻译

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MBRS1540T3 替代型号

型号 品牌 替代类型 描述 数据表
SS24T3G ONSEMI

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