Datasheet > MBRS1545CT-Y

MBRS1545CT-Y

更新时间： 2024-11-16 01:10:43

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	227K
描述
Dual Common Cathode Schottky Rectifier

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中文翻译

获取价格

数据手册

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MBRS1545CT-Y 数据手册

MBRS1545CT-Y thru MBRS15150CT-Y

Taiwan Semiconductor

CREAT BY ART

Dual Common Cathode Schottky Rectifier

FEATURES

- Low power loss, high efficiency

- Ideal for automated placement

- Guardring for overvoltage protection

- High surge current capability

- Moisture sensitivity level: level 1, per J-STD-020

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

TO-263AB (D²PAK)

MECHANICAL DATA

Case: TO-263AB (D²PAK)

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - green compound (halogen-free)

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Polarity: As marked

Weight: 1.37 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25^oC unless otherwise noted)

MBRS

1545

CT-Y

MBRS

1560

CT-Y

MBRS

15100

CT-Y

MBRS

15150

CT-Y

PARAMETER

SYMBOL

Unit

MBRS

Marking code

1545CT 1560CT 15100CT 15150CT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated VR, Square wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

I_RRM

150

Peak repetitive reverse surge current (Note 1)

Maximum instantaneous forward voltage (Note 2)

I_F= 7.5 A, T_J=25^oC

I_F= 7.5 A, T_J=125^oC

I_F= 15 A, T_J=25^oC

0.5

0.75

0.92

0.95

V_F

0.57

0.84

0.72

0.65

0.82

0.92

I_F= 15 A, T_J=125^oC

Maximum reverse current @ rated VR T_J=25 ^oC

T_J=125 ^oC

0.1

I_R

V/μs

^OC/W

Voltage rate of change (Rated V_R)

10000

dV/dt

R_θjC

R_θjA

Typical thermal resistance

^OC

Operating junction temperature range

Storage temperature range

T_J

- 55 to +150

T_STG

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Document Number: DS_D1408040

Version: A14

12 3 4

中文翻译

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