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MBRS140LT3G

更新时间： 2024-01-02 13:53:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 69K
描述
Surface Mount Schottky Power Rectifier

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中文翻译

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MBRS140LT3G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.19
其他特性：FREE WHEELING DIODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.425 VJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：40 A元件数量：1
端子数量：2最高工作温度：125 °C
最低工作温度：-55 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：40 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

MBRS140LT3G 数据手册

 浏览型号MBRS140LT3G的Datasheet PDF文件第2页浏览型号MBRS140LT3G的Datasheet PDF文件第3页浏览型号MBRS140LT3G的Datasheet PDF文件第4页浏览型号MBRS140LT3G的Datasheet PDF文件第5页 
MBRS140LT3  
Surface Mount  
Schottky Power Rectifier  
SMB Power Surface Mount Package  
This device employs the Schottky Barrier principle in a  
metal−to−silicon power rectifier. Features epitaxial construction with  
oxide passivation and metal overlay contact. Ideally suited for low  
voltage, high frequency switching power supplies; free wheeling  
diodes and polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
1.0 AMPERE − 40 VOLTS  
Features  
• Compact Package with J−Bend Leads Ideal for Automated Handling  
• Highly Stable Oxide Passivated Junction  
• Guardring for Over−Voltage Protection  
• Low Forward Voltage Drop  
• Pb−Free Package is Available  
Mechanical Characteristics:  
• Case: Molded Epoxy  
SMB  
CASE 403A  
PLASTIC  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• Weight: 95 mg (Approximately)  
• Cathode Polarity Band  
MARKING DIAGRAM  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
AYWW  
B14LG  
G
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
40  
V
RRM  
B14L  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
V
RWM  
V
R
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
Average Rectified Forward Current  
I
1.0  
2.0  
40  
A
A
A
O
(At Rated V , T = 110°C)  
R
C
Peak Repetitive Forward Current (At Rated  
I
FRM  
V , Square Wave, 100 kHz, T = 110°C)  
R
C
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Storage / Operating Case Temperature  
Operating Junction Temperature  
T
, T  
−55 to +150  
−55 to +125  
10,000  
°C  
°C  
stg  
C
MBRS140LT3  
MBRS140LT3G  
SMB  
2500/Tape & Reel  
2500/Tape & Reel  
T
J
SMB  
(Pb−Free)  
Voltage Rate of Change  
dv/dt  
V/ms  
(Rated V , T = 25°C)  
R
J
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
October, 2007 − Rev. 3  
MBRS140LT3/D  
12345

中文翻译

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MBRS140LT3G 替代型号

型号 品牌 替代类型 描述 数据表
MBRS140T3 ONSEMI

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