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MBRS1540

更新时间: 2024-01-28 04:18:54
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摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
4页 144K
描述
Surface Mount Schottky Power Rectifier

MBRS1540 数据手册

 浏览型号MBRS1540的Datasheet PDF文件第2页浏览型号MBRS1540的Datasheet PDF文件第3页浏览型号MBRS1540的Datasheet PDF文件第4页 
Order this document  
by MBRS1540T3/D  
SEMICONDUCTOR TECHNICAL DATA  
SMB Power Surface Mount Package  
. . . employing the Schottky Barrier principle in a metal–to–silicon power  
rectifier. Features epitaxial construction with oxide passivation and metal  
overlay contact. Ideally suited for low voltage, high frequency switching power  
supplies; free wheeling diodes and polarity protection diodes.  
SCHOTTKY BARRIER  
RECTIFIER  
1.5 AMPERES  
40 VOLTS  
Compact Package with J–Bend Leads Ideal for Automated Handling  
Highly Stable Oxide Passivated Junction  
Guardring for Over–Voltage Protection  
Low Forward Voltage Drop  
Mechanical Characteristics:  
Case: Molded Epoxy  
Epoxy Meets UL94, VO at 1/8  
Weight: 95 mg (approximately)  
Polarity: Notch in Plastic Body Indicates Cathode Lead  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
CASE 403A–03  
SMB  
Available in 12 mm Tape, 2500 Units per 13Reel, Add “T3” Suffix to Part Number  
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable  
Marking: BGJ  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
40  
Volts  
RRM  
RWM  
R
V
Average Rectified Forward Current (At Rated V , T = 100°C)  
I
1.5  
3.0  
Amps  
Amps  
R
C
O
Peak Repetitive Forward Current  
I
FRM  
(At Rated V , Square Wave, 100 kHz, T = 105°C)  
R
C
Non–Repetitive Peak Surge Current  
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)  
I
40  
Amps  
FSM  
Storage / Operating Case Temperature  
Tstg, T  
– 55 to +150  
– 55 to +125  
10,000  
°C  
°C  
C
Operating Junction Temperature  
T
J
Voltage Rate of Change (Rated V , T = 25°C)  
dv/dt  
V/ s  
R
J
THERMAL CHARACTERISTICS  
(2)  
Thermal Resistance — Junction–to–Lead  
R
R
θJA  
24  
80  
°C/W  
Volts  
mA  
θJL  
(2)  
Thermal Resistance — Junction–to–Ambient  
ELECTRICAL CHARACTERISTICS  
V
T
T
= 25°C  
T
T
= 125°C  
F
J
J
(1)  
Maximum Instantaneous Forward Voltage  
see Figure 2  
0.46  
0.54  
0.39  
0.54  
(I = 1.5 A)  
(I = 3.0 A)  
F
F
I
= 25°C  
= 100°C  
R
J
J
Maximum Instantaneous Reverse Current  
see Figure 4  
0.8  
0.1  
5.7  
1.6  
(V = 40 V)  
R
(V = 20 V)  
R
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
(1) Pulse Test: Pulse Width 250 µs, Duty Cycle 2.0%.  
(2) Mounted with minimum recommended pad size, PC Board FR4.  
Motorola, Inc. 1997  

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