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MBRA130LT3G PDF预览

MBRA130LT3G

更新时间： 2024-02-27 14:30:40
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管PC
页数 文件大小 规格书
4页 78K
描述
Surface Mount Schottky Power Rectifier

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中文翻译

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MBRA130LT3G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：DO-216AA包装说明：HALOGEN FREE AND ROHS COMPLIANT, MICRO MINIATURE, PLASTIC, CASE 457-04, POWERMITE-2
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：1 week风险等级：0.89
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：224971Samacsys Pin Count：2
Samacsys Part Category：DiodeSamacsys Package Category：Diodes Moulded
Samacsys Footprint Name：SMA CASE 403D-02Samacsys Released Date：2015-11-03 12:30:39
Is Samacsys：N其他特性：FREE WHEELING DIODE
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.71 VJEDEC-95代码：DO-216AA
JESD-30 代码：R-PSSO-G1JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：30 A
元件数量：1端子数量：2
最高工作温度：125 °C最低工作温度：-55 °C
最大输出电流：1 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大重复峰值反向电压：30 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：40
Base Number Matches：1

MBRA130LT3G 数据手册

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MBRA130LT3  
Surface Mount Schottky  
Power Rectifier  
SMA Power Surface Mount Package  
This device employs the Schottky Barrier principle in a  
metal−to−siliconpower rectifier. Features epitaxial construction with  
oxide passivation and metal overlay contact. Ideally suited for low  
voltage, high frequency switching power supplies; free wheeling  
diodes and polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
1.0 AMPERES, 30 VOLTS  
Features  
• Compact Package with J−Bend Leads Ideal for Automated Handling  
• Highly Stable Oxide Passivated Junction  
• Guardring for Over−Voltage Protection  
• Low Forward Voltage Drop  
• Pb−Free Package is Available  
Mechanical Characteristics:  
• Case: Molded Epoxy  
SMA  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• Weight: 70 mg (approximately)  
CASE 403D  
PLASTIC  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
MARKING DIAGRAM  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
• Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or  
Polarity Band  
B1L3  
ALYW  
• Available in 12 mm Tape, 5000 Units per 13 inch Reel, Add “T3”  
Suffix to Part Number  
• Device Meets MSL1 Requirements  
B1L3  
A
L
Y
W
= Device Code  
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
• ESD Ratings:  
Machine Model, C (>400 V)  
Human Body Model, 3B (>8000 V)  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
30  
V
RRM  
RWM  
ORDERING INFORMATION  
R
†
Device  
Package  
Shipping  
Average Rectified Forward Current  
I
O
1.0  
2.0  
A
A
(At Rated V , T = 105°C)  
R
C
MBRA130LT3  
SMA  
5000/Tape & Reel  
5000/Tape & Reel  
Peak Repetitive Forward Current  
I
FRM  
(At Rated V , Square Wave, 100 kHz,  
MBRA130LT3G  
SMA  
R
(Pb−Free)  
T
C
= 105°C)  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
25  
A
FSM  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Storage Temperature  
T
−55 to +150  
−55 to +125  
10,000  
°C  
°C  
stg  
Operating Junction Temperature  
T
J
Voltage Rate of Change, (Rated V , T = 25°C)  
dv/dt  
V/ms  
R
J
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
February, 2005 − Rev. 7  
MBRA130LT3/D  
1234

中文翻译

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MBRA130LT3G 替代型号

型号 品牌 替代类型 描述 数据表
MBRS130T3G ONSEMI

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