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MBR560MFST3G PDF预览

MBR560MFST3G

更新时间: 2024-11-16 01:12:39
品牌 Logo 应用领域
安森美 - ONSEMI 功效瞄准线光电二极管
页数 文件大小 规格书
5页 112K
描述
SWITCHMODE Power Rectifier

MBR560MFST3G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SO-8FL, DFN5, 6 PIN针数:5
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:1.51其他特性:LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.78 V
JESD-30 代码:R-PDSO-F5JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:5最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:60 V
最大反向电流:150 µA表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

MBR560MFST3G 数据手册

 浏览型号MBR560MFST3G的Datasheet PDF文件第2页浏览型号MBR560MFST3G的Datasheet PDF文件第3页浏览型号MBR560MFST3G的Datasheet PDF文件第4页浏览型号MBR560MFST3G的Datasheet PDF文件第5页 
MBR560MFS, NRVB560MFS  
SWITCHMODE  
Power Rectifiers  
These stateoftheart devices have the following features:  
Features  
Low Power Loss / High Efficiency  
New Package Provides Capability of Inspection and Probe After  
Board Mounting  
http://onsemi.com  
Guardring for Stress Protection  
SCHOTTKY BARRIER  
RECTIFIERS  
Low Forward Voltage Drop  
175°C Operating Junction Temperature  
NRVB Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
Wettable Flanks Option available  
These are PbFree Devices  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Epoxy Meets Flammability Rating UL 940 @ 0.125 in.  
Lead Finish: 100% Matte Sn (Tin)  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
5 AMPERES  
60 VOLTS  
5,6  
1,2,3  
MARKING  
DIAGRAM  
A
C
C
1
B560  
AYWZZ  
A
A
SO8 FLAT LEAD  
CASE 488AA  
STYLE 2  
Not Used  
Device Meets MSL 1 Requirements  
B560  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
The Heat Generated must be less than the Thermal Conductivity  
from JunctiontoAmbient: dPD/dTJ < 1/RJA  
W
= Work Week  
MAXIMUM RATINGS  
ZZ  
= Lot Traceability  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
ORDERING INFORMATION  
V
RWM  
V
60  
R
Device  
Package  
Shipping†  
1500 /  
Average Rectified Forward Current  
I
5.0  
A
A
F(AV)  
MBR560MFST1G  
SO8 FL  
(Rated V , T = 160°C)  
R
C
(PbFree) Tape & Reel  
Peak Repetitive Forward Current,  
(Rated V , Square Wave,  
I
10  
FRM  
R
MBR560MFST3G  
NRVB560MFST1G  
SO8 FL 5000 /  
20 kHz, T = 165°C)  
C
(PbFree) Tape & Reel  
SO8 FL 1500 /  
(PbFree) Tape & Reel  
SO8 FL 5000 /  
(PbFree) Tape & Reel  
NonRepetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, Single  
Phase, 60 Hz)  
I
100  
A
FSM  
NRVB560MFST3G  
Storage Temperature Range  
T
65 to +175  
55 to +175  
10  
°C  
°C  
mJ  
stg  
Operating Junction Temperature  
T
J
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Unclamped Inductive Switching  
Energy (10 mH Inductor,  
Nonrepetitive)  
E
AS  
ESD Rating (Human Body Model)  
ESD Rating (Machine Model)  
3B  
M4  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
November, 2013 Rev. 1  
MBR560MFS/D  

MBR560MFST3G 替代型号

型号 品牌 替代类型 描述 数据表
MBR560MFST1G ONSEMI

完全替代

SWITCHMODE Power Rectifier
NRVB560MFST1G ONSEMI

类似代替

SWITCHMODE Power Rectifier
NRVB560MFST3G ONSEMI

功能相似

SWITCHMODE Power Rectifier

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