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NRVB560MFST3G PDF预览

NRVB560MFST3G

更新时间： 2024-01-13 18:52:38
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 112K
描述
SWITCHMODE Power Rectifier

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NRVB560MFST3G 数据手册

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MBR560MFS, NRVB560MFS  
SWITCHMODE  
Power Rectifiers  
These state−of−the−art devices have the following features:  
Features  
• Low Power Loss / High Efficiency  
• New Package Provides Capability of Inspection and Probe After  
Board Mounting  
http://onsemi.com  
• Guardring for Stress Protection  
SCHOTTKY BARRIER  
RECTIFIERS  
• Low Forward Voltage Drop  
• 175°C Operating Junction Temperature  
• NRVB Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
• Wettable Flanks Option available  
• These are Pb−Free Devices  
Mechanical Characteristics:  
• Case: Epoxy, Molded  
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.  
• Lead Finish: 100% Matte Sn (Tin)  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
5 AMPERES  
60 VOLTS  
5,6  
1,2,3  
MARKING  
DIAGRAM  
A
C
C
1
B560  
AYWZZ  
A
A
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 2  
Not Used  
• Device Meets MSL 1 Requirements  
B560  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
• The Heat Generated must be less than the Thermal Conductivity  
from Junction−to−Ambient: dPD/dTJ < 1/RJA  
W
= Work Week  
MAXIMUM RATINGS  
ZZ  
= Lot Traceability  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
ORDERING INFORMATION  
V
RWM  
V
60  
R
Device  
Package  
Shipping†  
1500 /  
Average Rectified Forward Current  
I
5.0  
A
A
F(AV)  
MBR560MFST1G  
SO−8 FL  
(Rated V , T = 160°C)  
R
C
(Pb−Free) Tape & Reel  
Peak Repetitive Forward Current,  
(Rated V , Square Wave,  
I
10  
FRM  
R
MBR560MFST3G  
NRVB560MFST1G  
SO−8 FL 5000 /  
20 kHz, T = 165°C)  
C
(Pb−Free) Tape & Reel  
SO−8 FL 1500 /  
(Pb−Free) Tape & Reel  
SO−8 FL 5000 /  
(Pb−Free) Tape & Reel  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, Single  
Phase, 60 Hz)  
I
100  
A
FSM  
NRVB560MFST3G  
Storage Temperature Range  
T
−65 to +175  
−55 to +175  
10  
°C  
°C  
mJ  
stg  
Operating Junction Temperature  
T
J
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Unclamped Inductive Switching  
Energy (10 mH Inductor,  
Non−repetitive)  
E
AS  
ESD Rating (Human Body Model)  
ESD Rating (Machine Model)  
3B  
M4  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
November, 2013 − Rev. 1  
MBR560MFS/D  
12345

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NRVB560MFST3G 替代型号

型号 品牌 替代类型 描述 数据表
NRVB560MFST1G ONSEMI

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MBR560MFST3G ONSEMI

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