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MBR5H100MFST1G

更新时间： 2024-02-08 23:04:09
品牌 Logo 应用领域
安森美 - ONSEMI 开关
页数 文件大小 规格书
5页 105K
描述
SWITCHMODE Power Rectifiers

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中文翻译

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MBR5H100MFST1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：DFN包装说明：LEAD FREE, PLASTIC, CASE 488AA-01, SO-8FL, DFN-6
针数：5Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：4 weeks风险等级：1.45
其他特性：LOW POWER LOSS应用：EFFICIENCY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.6 VJESD-30 代码：R-PDSO-F5
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：200 A元件数量：1
相数：1端子数量：5
最高工作温度：175 °C最低工作温度：-55 °C
最大输出电流：5 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED最大重复峰值反向电压：100 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MBR5H100MFST1G 数据手册

 浏览型号MBR5H100MFST1G的Datasheet PDF文件第2页浏览型号MBR5H100MFST1G的Datasheet PDF文件第3页浏览型号MBR5H100MFST1G的Datasheet PDF文件第4页浏览型号MBR5H100MFST1G的Datasheet PDF文件第5页 
MBR5H100MFS,  
NRVB5H100MFS  
SWITCHMODE  
Power Rectifiers  
These state−of−the−art devices have the following features:  
Features  
http://onsemi.com  
• Low Power Loss / High Efficiency  
• New Package Provides Capability of Inspection and Probe After  
Board Mounting  
• Guardring for Stress Protection  
• Low Forward Voltage Drop  
• 175°C Operating Junction Temperature  
SCHOTTKY BARRIER  
RECTIFIERS  
5 AMPERES  
100 VOLTS  
• NRVB Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
5,6  
1,2,3  
• These are Pb−Free Devices  
Mechanical Characteristics:  
MARKING  
DIAGRAM  
• Case: Epoxy, Molded  
A
C
C
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.  
• Lead Finish: 100% Matte Sn (Tin)  
1
B5H100  
AYWZZ  
A
A
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 2  
Not Used  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
B5H100 = Specific Device Code  
• Device Meets MSL 1 Requirements  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
V
RRM  
RWM  
100  
5
R
ORDERING INFORMATION  
Average Rectified Forward Current  
I
A
A
F(AV)  
Device  
Package  
Shipping†  
1500 /  
(Rated V , T = 150°C)  
R
C
MBR5H100MFST1G  
SO−8 FL  
Peak Repetitive Forward Current,  
(Rated V , Square Wave,  
I
10  
FRM  
(Pb−Free) Tape & Reel  
R
20 kHz, T = 150°C)  
C
MBR5H100MFST3G  
NRVB5H100MFST1G  
SO−8 FL 5000 /  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, Single  
Phase, 60 Hz)  
I
200  
A
FSM  
(Pb−Free) Tape & Reel  
SO−8 FL 1500 /  
(Pb−Free) Tape & Reel  
SO−8 FL 5000 /  
(Pb−Free) Tape & Reel  
Storage Temperature Range  
Operating Junction Temperature  
Voltage Rate of Change  
T
−65 to +175  
−55 to +175  
10,000  
°C  
°C  
NRVB5H100MFST3G  
stg  
T
J
dv/dt  
V/ms  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
(Rated V )  
R
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Unclamped Inductive Switching  
Energy (10 mH Inductor,  
Non−repetitive)  
E
AS  
100  
mJ  
ESD Rating (Human Body Model)  
ESD Rating (Machine Model)  
3B  
C
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
May, 2012 − Rev. 4  
MBR5H100MFS/D  
12345

中文翻译

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MBR5H100MFST1G 替代型号

型号 品牌 替代类型 描述 数据表
NRVB5H100MFST3G ONSEMI

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