Datasheet > MBR580

MBR580

更新时间： 2024-09-22 12:57:15

品牌	Logo	应用领域
森美特 - SUNMATE		二极管瞄准线功效
页数	文件大小	规格书
2页	272K
描述
5.0A Plug-in Schottky diode 80V DO-201 series

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBR580 数据手册

MBR520-MBR5100

SCHOTTKY BARRIER RECTIFIER DIODES

VOLTAGE RANGE: 20 - 100V

CURRENT: 5.0 A

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

Protection Applications

Mechanical Data

Case: DO-201AD, Molded Plastic

DO-201AD

Min

Terminals: Plated Leads Solderable per

Dim

Max

MIL-STD-202, Method 208

Polarity: Cathode Band

25.40

7.20

9.50

1.30

5.30

Weight: 1.2 grams (approx.)

Mounting Position: Any

Marking: Type Number

1.20

4.80

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol MBR520 MBR530 MBR540 MBR550 MBR560 MBR580 MBR5100 Unit

Peak Repetitive Reverse Voltage

V^RRM

Working Peak Reverse Voltage

DC Blocking Voltage

V^RWM

V^R

100

RMS Reverse Voltage

V^R(RMS)

Average Rectified Output Current @T_L= 100°C

(Note 1)

I^O

5.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

150

Forward Voltage

@I_F= 5.0A

V^FM

I^RM

0.55

0.70

0.85

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.5

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

C^j

500

400

°C/W

°C

R^ꢀ^JA

T^j, T^STG

-65 to +150

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

1 of 2

www.sunmate.tw

中文翻译

下载PDF

与MBR580相关器件

型号	品牌	获取价格	描述	数据表
MBR5825H	MOTOROLA	获取价格	5A, 40V, SILICON, RECTIFIER DIODE
MBR5825H1	MOTOROLA	获取价格	5A, 40V, SILICON, RECTIFIER DIODE
MBR5825HX	MOTOROLA	获取价格	Rectifier Diode, Schottky, 1 Element, 15A, 40V V(RRM),
MBR5825HXV	MOTOROLA	获取价格	Rectifier Diode, Schottky, 1 Element, 15A, 40V V(RRM),
MBR5831H	MOTOROLA	获取价格	25A, 40V, SILICON, RECTIFIER DIODE, DO-4
MBR5831H1	MOTOROLA	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 40V V(RRM), Silicon, DO-4
MBR590	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR5H100MFS	ONSEMI	获取价格	SWITCHMODE Power Rectifiers
MBR5H100MFST1G	ONSEMI	获取价格	SWITCHMODE Power Rectifiers
MBR5H100MFST3G	ONSEMI	获取价格	SWITCHMODE Power Rectifiers