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MBR30H35PT-E3/45

更新时间： 2024-09-16 14:53:11
品牌 Logo 应用领域
威世 - VISHAY 局域网功效瞄准线二极管
页数 文件大小 规格书
4页 92K
描述
DIODE 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN, Rectifier Diode

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MBR30H35PT-E3/45 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：TO-247AD
包装说明：R-PSFM-T3针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.69
Is Samacsys：N其他特性：FREE WHEELING DIODE, LOW POWER LOSS
应用：EFFICIENCY外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.58 V
JEDEC-95代码：TO-247ADJESD-30 代码：R-PSFM-T3
JESD-609代码：e3最大非重复峰值正向电流：200 A
元件数量：2相数：1
端子数量：3最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：30 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT APPLICABLE
认证状态：Not Qualified最大重复峰值反向电压：35 V
子类别：Rectifier Diodes表面贴装：NO
技术：SCHOTTKY端子面层：Matte Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT APPLICABLEBase Number Matches：1

MBR30H35PT-E3/45 数据手册

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MBR3035PT, MBR3045PT, MBR3050PT, MBR3060PT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Schottky Rectifier  
FEATURES  
• Power pack  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
• Solder dip 275 °C max., 10 s, per JESD 22-B106  
2
1
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TO-247AD (TO-3P)  
PIN 2  
CASE  
PIN 1  
PIN 3  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, or polarity protection application.  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
IF(AV)  
30 A  
Case: TO-247AD (TO-3P)  
VRRM  
IFSM  
VF  
35 V, 45 V, 50 V, 60 V  
200 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
0.60 V, 0.65 V  
TJ max.  
Package  
150 °C  
TO-247AD (TO-3P)  
Common cathode  
Polarity: As marked  
Diode variations  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT  
Maximum repetitive peak reverse voltage  
Maximum working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
V
A
Maximum average forward rectified current (fig. 1)  
IF(AV)  
30  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
200  
A
A
Peak repetitive reverse surge current at tp = 2 μs, 1 kHz  
per diode  
(1)  
IRRM  
2.0  
1.0  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/μs  
°C  
-65 to +150  
-65 to +175  
TSTG  
°C  
Note  
(1)  
2.0 μs pulse width, f = 1.0 kHz  
Revision: 17-Aug-15  
Document Number: 88676  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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