MBR30H90

更新时间： 2024-11-05 22:07:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
2页	66K
描述
High-Voltage Dual Schottky Rectifiers

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中文翻译

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MBR30H90 数据手册

MBR30H90PT & MBR30H100PT

New Product

Vishay Semiconductors

formerly General Semiconductor

High-Voltage Dual Schottky Rectifiers

Reverse Voltage 90 to 100V

Forward Current 30A

Features

• Plastic package has Underwriters Laboratory

Flammability Classifications 94V-0

• Dual rectifier construction, positive center-tap

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency

• High current capability, low forward voltage drop

• High surge capability

TO-247AD

0.245 (6.2)

0.225 (5.7)

0.645 (16.4)

0.625 (15.9)

0.203 (5.16)

0.193 (4.90)

0.078 REF

(1.98)

0.323 (8.2)

0.313 (7.9)

10°

0.170

(4.3)

TYP.

BOTH SIDES

0.840 (21.3)

0.820 (20.8)

0.142 (3.6)

0.138 (3.5)

• For use in low voltage, high frequency inverters,

free-wheeling, and polarity protection applications

• Guardring for overvoltage protection

0.086 (2.18)

0.076 (1.93)

REF.

BOTH

SIDES

Mechanical Data

0.118 (3.0)

0.108 (2.7)

0.127 (3.22)

0.117 (2.97)

Case: JEDEC TO-247AD molded plastic body

0.160 (4.1)

0.140 (3.5)

Terminals: Lead solderable per MIL-STD-750, Method 2026

High temperature soldering guaranteed:

250°C/10 seconds, 0.17” (4.3mm) from case

Dimensions

in inches and

(millimeters)

0.795 (20.2)

0.775 (19.6)

PIN 2

CASE

PIN 1

PIN 3

Polarity: As marked

0.225 (5.7)

0.205 (5.2)

0.030 (0.76)

0.020 (0.51)

0.048 (1.22)

0.044 (1.12)

Mounting Position: Any Mounting Torque: 10 in-lbs max.

Weight: 0.2 oz., 5.6 g

Maximum Ratings & Thermal Characteristics Ratings per leg at T_A= 25°C unless otherwise specified.

Parameter

Symbol

V_RRM

V_RWM

V_DC

MBR30H90PT MBR30H100PT

Unit

Maximum repetitive peak reverse voltage

Maximum working peak reverse voltage

Maximum DC blocking voltage

100

Total device

Per leg

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current per leg at T_C=105°C

(rated V_R, square wave, 20 KH_Z)

I_FRM

I_FSM

Peak forward surge current, 8.3ms single half sine-wave

superimposed on rated load (JEDEC Method)

265

Peak repetitive reverse surge current at tp = 2µs, f = 1kHz

Non-repetitive avalanche energy (I_AS= 0.5A, L = 60mH)

Voltage rate of change at (rated V_R)

I_RRM

E_AS

dv/dt

R_θJC

T_J

1.0

7.5

10,000

1.6

V/µs

°C/W

°C

Thermal resistance from junction to case per leg

Operating junction and storage temperature range

–65 to +175

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

MBR30H90PT MBR30H100PT

Unit

Maximum instantaneous

I_F= 15A, T_J= 25°C

I_F= 15A, T_J= 125°C

I_F= 30A, T_J= 25°C

I_F= 30A, T_J= 125°C

0.82

0.67

0.93

0.80

forward voltage per leg at: ⁽¹⁾

V_F

Maximum instantaneous reverse current at

rated DC blocking voltage per leg ⁽¹⁾

T_J= 25°C

T_J= 125°C

5.0

6.0

µA

I_R

Note: (1) Pulse test: 300µs pulse width, 1% duty cycle

Document Number 88678

02-Jul-02

www.vishay.com

中文翻译

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与MBR30H90相关器件

型号	品牌	获取价格	描述	数据表
MBR30H90CT	VISHAY	获取价格	High-Voltage Dual Schottky Rectifiers
MBR30H90CT	KERSEMI	获取价格	Plastic package has Underwriters Laboratory Flammability Classification 94V-0
MBR30H90CT/45	VISHAY	获取价格	Rectifier Diode, Schottky, 15A, 90V V(RRM)
MBR30H90CT/45-E3	VISHAY	获取价格	DIODE 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
MBR30H90CT_07	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBR30H90CT_08	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBR30H90CT_09	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBR30H90CT-E3	VISHAY	获取价格	DIODE 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
MBR30H90CT-E3/45	VISHAY	获取价格	DIODE 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBR30H90CTHE3/45	VISHAY	获取价格	DIODE 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

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