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MBR30H50PT-E3/45 PDF预览

MBR30H50PT-E3/45

更新时间： 2024-11-06 14:53:11
品牌 Logo 应用领域
威世 - VISHAY 局域网功效瞄准线二极管
页数 文件大小 规格书
4页 90K
描述
DIODE 30 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AD, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN, Rectifier Diode

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MBR30H50PT-E3/45 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TO-247AD
包装说明：R-PSFM-T3针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.71
其他特性：FREE WHEELING DIODE, LOW POWER LOSS应用：EFFICIENCY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.63 VJEDEC-95代码：TO-247AD
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
最大非重复峰值正向电流：200 A元件数量：2
相数：1端子数量：3
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：30 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT APPLICABLE认证状态：Not Qualified
最大重复峰值反向电压：50 V子类别：Rectifier Diodes
表面贴装：NO技术：SCHOTTKY
端子面层：MATTE TIN端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT APPLICABLE
Base Number Matches：1

MBR30H50PT-E3/45 数据手册

 浏览型号MBR30H50PT-E3/45的Datasheet PDF文件第2页浏览型号MBR30H50PT-E3/45的Datasheet PDF文件第3页浏览型号MBR30H50PT-E3/45的Datasheet PDF文件第4页 
MBR30H35PT thru MBR30H60PT  
Vishay General Semiconductor  
Dual Common-Cathode Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• High frequency operation  
3
2
• Solder dip 260 °C, 40 s  
1
TO-247AD (TO-3P)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PIN 2  
CASE  
PIN 1  
PIN 3  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters or polarity protection application.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
30 A  
Case: TO-247AD (TO-3P)  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
VRRM  
IFSM  
VF  
35 V to 60 V  
200 A  
0.58 V, 0.63 V  
150 µA  
IR  
TJ max.  
175 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL MBR30H35PT MBR30H45PT MBR30H50PT MBR30H60PT UNIT  
Maximum repetitive peak reverse voltage  
Maximum working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
V
A
Maximum average forward rectified current (Fig. 1)  
IF(AV)  
30  
80  
Non-repetitive avalanche energy per diode  
at 25 °C, IAS = 4 A, L = 10 mH  
EAS  
mJ  
A
Peak forward surge current, 8.3 ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
200  
Peak repetitive reverse surge current per diode (1)  
IRRM  
2.0  
30  
1.0  
20  
A
Peak non-repetitive reverse energy (8/20 µs waveform)  
ERSM  
mJ  
Electrostatic discharge capacitor voltage human body  
model: C = 100 pF, R = 1.5 kΩ  
VC  
25  
kV  
Voltage rate of change at rated VR  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/µs  
°C  
- 65 to + 175  
- 65 to + 175  
TSTG  
°C  
Note:  
(1) 2.0 µs pulse width, f = 1.0 kHz  
Document Number: 88792  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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