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MBR20100CTKPBF PDF预览

MBR20100CTKPBF

更新时间: 2024-11-14 11:11:59
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网
页数 文件大小 规格书
7页 168K
描述
Schottky Rectifier, 2 x 10 A

MBR20100CTKPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:7.5Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT应用:HIGH POWER
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.65 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:850 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

MBR20100CTKPBF 数据手册

 浏览型号MBR20100CTKPBF的Datasheet PDF文件第2页浏览型号MBR20100CTKPBF的Datasheet PDF文件第3页浏览型号MBR20100CTKPBF的Datasheet PDF文件第4页浏览型号MBR20100CTKPBF的Datasheet PDF文件第5页浏览型号MBR20100CTKPBF的Datasheet PDF文件第6页浏览型号MBR20100CTKPBF的Datasheet PDF文件第7页 
MBR20...CTKPbF Series  
Vishay High Power Products  
Schottky Rectifier,  
2 x 10 A  
FEATURES  
• 150 °C TJ operation  
Base  
common  
cathode  
• Center tap package  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
• Guard ring for enhanced ruggedness and long term  
reliability  
2
2
Anode  
Anode  
Common  
cathode  
1
3
TO-220AB  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
DESCRIPTION  
PRODUCT SUMMARY  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
IF(AV)  
2 x 10 A  
80 V to 100 V  
VR  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFRM  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Rectangular waveform (per device)  
A
V
80 to 100  
20  
TC = 133 °C (per leg)  
tp = 5 µs sine  
A
IFSM  
850  
VF  
10 Apk, TJ = 125 °C  
Range  
0.65  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
MBR2080CTKPbF  
MBR2090CTKPbF  
MBR20100CTKPbF  
100  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
80  
90  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 133 °C, rated VR  
VALUES  
UNITS  
per leg  
10  
20  
20  
Maximum average  
forward current  
IF(AV)  
per device  
Peak repetitive forward current per leg  
IFRM  
Rated VR, square wave, 20 kHz, TC = 133 °C  
Following any rated load  
condition and with rated  
RRM applied  
A
5 µs sine or 3 µs rect. pulse  
850  
V
Non-repetitive peak surge current  
IFSM  
Surge applied at rated load conditions half wave,  
single phase, 60 Hz  
150  
Peak repetitive reverse surge current  
Non-repetitive avalanche energy per leg  
IRRM  
EAS  
2.0 µs, 1.0 kHz  
0.5  
24  
TJ = 25 °C, IAS = 2 A, L = 12 mH  
mJ  
Document Number: 94287  
Revision: 05-Oct-09  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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