Datasheet > MBR20100F

MBR20100F

更新时间： 2024-09-14 18:09:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	903K
描述
Schottky Diodes

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中文翻译

获取价格

数据手册

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MBR20100F 数据手册

DIP Type

Diodes

Schottky Barrier Diodes

MBR20100F

Unit: mm

TO-220F

±0.20

2.54

±0.20

0.70

φ3.

■ Features

● LOW VF.

● High Operating Junction Temperature.

● High Switching Speed.

±0.20

2.76

● High Reliability.

1.47max

±0.20

0.50

±0.20

0.80

2, 4

2.54typ

■ Absolute Maximum Ratings Ta = 25℃

Parameter

DC Blocking Voltage @ Ir=0.2mA

DC Forward Current

Symbol

Rating

100

Unit

RRM

F(AV)

FSM

Peak forward surge current

Junction Temperature

150

175

℃

Storage temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Reverse breakdown voltage

Forward voltage

Symbol

Test Conditions

= 0.2 m A

= 10 A ,Tc=25℃

Min

100

Typ

Max Unit

(Note.1)

850

Reverse voltage leakage current

R= 100V,Tc=25℃

Note.1: Pulse Test: Pulse Width = 300 us, Duty Cycle ≤ 2.0%.

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