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MBR20100F PDF预览

MBR20100F

更新时间: 2024-02-01 19:08:03
品牌 Logo 应用领域
ASEMI 高压
页数 文件大小 规格书
3页 521K
描述
Dual High-Voltage Schottky Rectifiers

MBR20100F 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:R-PSFM-T3Reach Compliance Code:unknown
风险等级:5.58Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:3
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR20100F 数据手册

 浏览型号MBR20100F的Datasheet PDF文件第2页浏览型号MBR20100F的Datasheet PDF文件第3页 
MBR2080 THUR MBR20100  
Dual High-Voltage Schottky Rectifiers  
REV:1.01  
◆ Half Bridge Rectified、Common Cathode Structure.  
◆ Multilayer Metal -Silicon Potential Structure.  
◆ Low Power Waste,High Efficiency.  
Typical Reference  
Data  
VRRM= 80V  
IF(AV)= 20A  
◆ Beautiful High Temperature Character.  
◆ Have Over Voltage protect loop,high reliability.  
◆ RoHs Product.  
VRRM= 90V  
IF(AV)= 20A  
● Low Voltage High Frequency Switching Power Supply.  
● Low Voltage High Frequency Invers Circuit.  
VRRM= 100V  
IF(AV)= 20A  
● Low Voltage Continued Circuit and Protection Circuit.  
■ MBR2080、MBR2090、MBR20100 Schottky diode,in the  
manufacture uses the main process technology includes:  
Silicon epitaxial substrate, P+ loop technology,The  
potential metal and the silicon alloy technology, the device  
uses the two chip, the common cathode, the plastic package  
structure.  
Polarity  
Absolute Maximum Ratings  
Item  
MBR20100  
Symbol MBR2080 MBR2090  
Unit  
Maximal Inverted Repetitive Peak Voltage  
Maximal DC Interdiction Voltage  
VRRM  
VDC  
80  
80  
90  
90  
100  
100  
V
V
Average Rectified Forward Current TC=150℃  
Device  
Whole  
20  
10  
IFAV  
A
Unilateral  
Forward Peak Surge Current(Rated Load 8.3 Half  
Mssine Wave-According to JEDEC Method)  
150  
IFSM  
A
Operating Junction Temperature  
Storage Temperature  
-40- +175  
-40- +175  
TJ  
TSTG  
Electricity Character  
Representa  
tive  
Test Condition  
Item  
Minimum  
MBR2080 MBR2090MBR20100Unit  
100  
1
TJ =25℃  
TJ =125℃  
VF TJ =25℃  
uA  
mA  
IR  
VR=VRRM  
IF=10A  
0.82 0.84 0.86 V  
Page1  
www.asemi.tw  

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