MBR20...CTKPbF Series
Vishay High Power Products
Schottky Rectifier,
2 x 10 A
FEATURES
• 150 °C TJ operation
Base
common
cathode
• Center tap package
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
2
2
Anode
Anode
Common
cathode
1
3
TO-220AB
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
IF(AV)
2 x 10 A
80 V to 100 V
VR
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFRM
CHARACTERISTICS
VALUES
20
UNITS
Rectangular waveform (per device)
A
V
80 to 100
20
TC = 133 °C (per leg)
tp = 5 µs sine
A
IFSM
850
VF
10 Apk, TJ = 125 °C
Range
0.65
V
TJ
- 65 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
MBR2080CTKPbF
MBR2090CTKPbF
MBR20100CTKPbF
100
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
80
90
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
TC = 133 °C, rated VR
VALUES
UNITS
per leg
10
20
20
Maximum average
forward current
IF(AV)
per device
Peak repetitive forward current per leg
IFRM
Rated VR, square wave, 20 kHz, TC = 133 °C
Following any rated load
condition and with rated
RRM applied
A
5 µs sine or 3 µs rect. pulse
850
V
Non-repetitive peak surge current
IFSM
Surge applied at rated load conditions half wave,
single phase, 60 Hz
150
Peak repetitive reverse surge current
Non-repetitive avalanche energy per leg
IRRM
EAS
2.0 µs, 1.0 kHz
0.5
24
TJ = 25 °C, IAS = 2 A, L = 12 mH
mJ
Document Number: 94287
Revision: 05-Oct-09
For technical questions, contact: diodestech@vishay.com
www.vishay.com
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