Datasheet > MBR20100CT-M3

MBR20100CT-M3

更新时间： 2024-11-15 14:55:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	118K
描述
Dual High Voltage Trench MOS Barrier Schottky Rectifier

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MBR20100CT-M3 数据手册

MBR2090CT-M3, MBR20100CT-M3

www.vishay.com

Vishay General Semiconductor

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

TMBS^®

TO-220AB

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode power

supplies, freewheeling diodes, DC/DC converters or polarity

protection application.

PIN 1

PIN 3

PIN 2

CASE

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: TO-220AB

I_F(AV)

2 x 10 A

90 V, 100 V

150 A

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3

- halogen-free, RoHS-compliant, and

V_RRM

commercial grade

I_FSM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_F

0.65 V

T_Jmax.

Package

150 °C

TO-220AB

Polarity: As marked

Diode variation

Common cathode

Mounting Torque: 10 in-lbs max.

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

MBR2090CT

MBR20100CT

UNIT

Max. repetitive peak reverse voltage

Working peak reverse voltage

100

V_RWM

V_DC

Max. DC blocking voltage

total device

Max. average forward rectified current at T_C= 133 °C

per diode

I_F(AV)

I_FSM

Peak forward surge current 8.3 ms single half sine-wave 

superimposed on rated load per diode

150

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-65 to +150

Revision: 11-May-16

Document Number: 89192

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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