Datasheet > MBR20100CTR

MBR20100CTR

更新时间： 2024-09-14 01:10:39

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描述
20 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

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中文翻译

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数据手册

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MBR20100CTR 数据手册

MBR2045CTR thru MBR20200CTR

MBR2045CTR/MBR2060CTR/MBR20100CTR/MBR20200CTR

Pb Free Plating Product

20 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

Unit : inch (mm)

TO-220AB

Features

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

ꢀ Standard MBR matured technology with high reliablity

.139(3.55)

MIN

.054(1.39)

.045(1.15)

ꢀ Low forward voltage drop

ꢀ High current capability

ꢀ Low reverse leakage current

ꢀ High surge current capability

Application

Automotive Inverters/Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

.038(0.96)

.019(0.50)

.025(0.65)MAX

Mechanical Data

ꢀ Case: Heatsink TO-220AB

.1(2.54)

ꢀ Epoxy: UL 94V-0 rate flame retardant

ꢀ

method 208

Terminals: Solderable per MIL-STD-202

ꢀ Polarity: As marked on diode body

ꢀ Mounting position: Any

ꢀ Weight: 2.0 gram approximately

Case

Doubler

Series

Negative

Positive

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Suffix "CT"

Suffix "CTR"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

MBR2045CTR MBR2060CTR MBR20100CTR MBR20200CTR

PARAMETER

SYMBOL

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated VR, Square Wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

I_RRM

150

Peak repetitive reverse surge current (Note 1)

0.5

Maximum instantaneous forward voltage (Note 2)

I_F=10A, T_J=25℃

0.80

0.70

0.95

0.85

0.75

0.95

0.85

0.99

0.87

1.23

1.10

I_F=10A, T_J=125℃

V_F

0.57

0.84

0.72

I_F=20A, T_J=25℃

I_F=20A, T_J=125℃

0.1

Maximum reverse current @ rated VR T_J=25 ℃

T_J=125 ℃

I_R

0.15

Voltage rate of change (Rated V_R)

Typical thermal resistance

10000

dV/dt

R_θJC

T_J

V/μs

°C/W

°C

1.0

2.0

Operating junction temperature range

Storage temperature range

- 55 to +150

T_STG

°C

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Rev.07C

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