Datasheet > MBR1020

MBR1020

更新时间： 2024-09-18 04:41:07

品牌	Logo	应用领域
强茂 - PANJIT		肖特基二极管
页数	文件大小	规格书
2页	426K
描述
10 AMPERES SCHOTTKY BARRIER RECTIFIERS

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技术参数
数据手册

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MBR1020 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.42

MBR1020 数据手册

MBR1020~MBR10100

10 AMPERES SCHOTTKY BARRIER RECTIFIERS

Unit : inch (mm)

TO-220AC

VOLTAGE

10 Amperes

20 to 100 Volts

CURRENT

FEATURES

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

.139(3.55)

MIN

.054(1.39)

.045(1.15)

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency.

• High current capability

• Guardring for overvlotage protection

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• Pb free product are available : 99% Sn above can meet Rohs

environment substance directive request

.038(0.96)

.019(0.50)

.025(0.65)MAX

MECHANICALDATA

Case: TO-220AC molded plastic

.1(2.54)

Terminals: solder plated, solderable per MIL-STD-750, Method 2026

Polarity: As marked.

Mounting Position: Any

Weight: 0.08 ounces, 2.24 grams.

MAXIMUMRATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PARAMETER

SYMBOL

MBR1020

MBR1030

MBR1040

MBR1045

MBR1050

MBR1060

MBR1080

MBR10100

100

UNITS

Maximum Recurrent Peak Reverse Voltage

RRM

RMS

Maximum RMS Voltage

31.5

Maximum DC Blocking Voltage

Maximum Average Forward Current (See fig.1)

100

Peak Forward Surge Current :8.3ms single half sine-

wave superimposed on rated load(JEDEC method)

FSM

150

Maximum Forward Voltage at 10A, per leg

Maximum DC Reverse Current Tc=25 ^OC

0.65

0.8

0.1

at Rated DC Blocking Voltage

=125^O

Typical Thermal Resistance

RθJC

^OC

/ W

Operating Junction Temperature Range

Storage Temperature Range

-50 TO

150

175

^OC

STG

-50 TO

Notes :

Both Bonding and Chip structure are available.

PAGE . 1

REV.0-MAR.30.2005

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