Datasheet > MBR10200

MBR10200

更新时间： 2024-09-18 07:08:11

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ASEMI		二极管高压局域网
页数	文件大小	规格书
3页	179K
描述
Dual High-Voltage Schottky Rectifiers

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MBR10200 数据手册

MBR10200

Dual High-Voltage Schottky Rectifiers

REV:1.01

◆ Half Bridge Rectified、Common Cathode Structure.

◆ Multilayer Metal -Silicon Potential Structure.

◆ Low Power Waste，High Efficiency.

Typical Reference

Data

VRRM=200V

◆ Beautiful High Temperature Character.

◆ Have Over Voltage protect loop，high reliability.

◆ RoHs Product.

IF(AV)= 10A

● Low Voltage High Frequency Switching Power Supply.

● Low Voltage High Frequency Invers Circuit.

● Low Voltage Continued Circuit and Protection Circuit.

Polarity

■ MBR10200 Schottky diode,in the manufacture uses the main

process technology includes: Silicon epitaxial substrate, P+

loop technology,The potential metal and the silicon alloy

technology, the device uses the two chip, the common cathode,

the plastic half package structure.

Absolute Maximum Ratings

Item

Maximal Inverted Repetitive Peak Voltage

Maximal DC Interdiction Voltage

Symbol

VRRM

VDC

MBR10200

200

Unit

200

Average Rectified Forward Current TC=150℃

Device

Whole

IFAV

Unilateral

Forward Peak Surge Current(Rated Load 8.3 Half

Mssine Wave-According to JEDEC Method)

150

IFSM

Operating Junction Temperature

Storage Temperature

-40- +175

℃

TSTG

Electricity Character

Representat

ive

Test Condition

MBR10200

Unit

Item

Minimum

TJ =25℃

TJ =125℃

VF TJ =25℃

VR=VRRM

IF=5A

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