Datasheet > MBR10200CDQ

MBR10200CDQ

更新时间： 2024-04-09 19:02:14

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	241K
描述
TO-252

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中文翻译

获取价格

数据手册

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MBR10200CDQ 数据手册

RoHS

MBR10200CDQ

COMPLIANT

Schottky Diodes

Pin 2

Features

● High frequency operation

● High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

● Guard ring for enhanced ruggedness and long term reliability

● Part no. with suffix “Q” means AEC-Q101 qualified

Typical Applications

Typical applications are in switching power supplies, converters,

automotive, freewheeling diodes, and reverse battery protection.

Pin 1

Pin 3

Mechanical Data

●

ackage: TO-252

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant, halogen free

● Terminals: Tin plated leads, solderable per

J-STD-002 and JESD22-B102

● Polarity: As marked

(T =25℃Unless otherwise specified

■

Maximum Ratings

）

MBR10200CDQ

MBR10200CD

200

PARAMETER

SYMBOL

UNIT

Device marking code

V_RRM

Repetitive peak reverse voltage

Average Rectified Output Current @60Hz -sine wave，

T_C=130℃

I_O

120

Forward Surge Current (Non-repetitive)

I_FSM

@60Hz Half-sine wave,1 cycle, T_a=25℃

A²s

℃

I²t

T_stg

T_J

Current Squared Time @1ms≤t≤8.3ms T_J=25℃

Storage Temperature

-55 ~ +175

Junction Temperature

（T =25℃Unless otherwise specified）

■Electrical Characteristics

TEST CONDITIONS

Typ

Max

PARAMETER

SYMBOL

UNIT

I_F=5A

0.83

0.7

105

0.9

0.8

T_J=25℃

Instantaneous forward voltage per diode

Typical junction capacitance per diode

Instantaneous reverse current per diode

V_F

C_J

I_R

I_F=5A

T_J=125℃

V_R=4V, f=1 MHz

500

T_J=25℃

V_R=200V

T_J=125℃

Thermal Characteristics （T =25℃Unless otherwise specified）

■

MBR10200CDQ

PARAMETER

SYMBOL

UNIT

Typical thermal resistance

Between junction and case

R_θJ-C

per diode

℃/W

1 / 4

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

S-B2949

Rev.1.0,10-Apr-23

12 3 4

中文翻译

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