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MBM29F160BE55PFTN PDF预览

MBM29F160BE55PFTN

更新时间: 2024-11-08 21:14:19
品牌 Logo 应用领域
富士通 - FUJITSU 光电二极管内存集成电路闪存
页数 文件大小 规格书
54页 579K
描述
Flash, 1MX16, 55ns, PDSO48, PLASTIC, TSOP1-48

MBM29F160BE55PFTN 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PLASTIC, TSOP1-48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.28最长访问时间:55 ns
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,31端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:-20 °C组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.06 mA
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

MBM29F160BE55PFTN 数据手册

 浏览型号MBM29F160BE55PFTN的Datasheet PDF文件第2页浏览型号MBM29F160BE55PFTN的Datasheet PDF文件第3页浏览型号MBM29F160BE55PFTN的Datasheet PDF文件第4页浏览型号MBM29F160BE55PFTN的Datasheet PDF文件第5页浏览型号MBM29F160BE55PFTN的Datasheet PDF文件第6页浏览型号MBM29F160BE55PFTN的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20879-3E  
FLASH MEMORY  
CMOS  
16M (2M × 8/1M × 16) BIT  
MBM29F160TE55/70/90  
MBM29F160BE55/70/90  
DESCRIPTION  
The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words  
of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be  
programmed in-system with the standard system 5.0 V VCC supply. 12.0 V VPP is not required for write or erase  
operations. The device can also be reprogrammed in standard EPROM programmers.  
The standard MBM29F160TE/BE offers access times of 55 ns, 70 ns and 90 ns, allowing operation of high-speed  
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write  
enable (WE) and output enable (OE) controls.  
The MBM29F160TE/BE is pin and command set compatible with JEDEC standard E2PROMs. Commands are  
written to the command register using standard microprocessor write timings. Register contents serve as input  
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch  
addresses and data needed for the programming and erase operations. Reading data out of the device is similar  
to reading from 12.0 V Flash or EPROM devices.  
(Continued)  
PRODUCT LINE UP  
MBM29F160TE/BE  
55  
70  
90  
Power Supply Voltage (V)  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
VCC = 5.0 V ± 5 %  
VCC = 5.0 V ± 10 %  
55  
55  
30  
70  
70  
30  
90  
90  
40  
PACKAGES  
48-pin plastic TSOP (I)  
Marking Side  
Marking Side  
(FPT-48P-M20)  
(FPT-48P-M19)  

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MBM29F160BE70TN SPANSION

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16M (2M X 8/1M X 16) BIT
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Flash, 1MX16, 70ns, PDSO48, PLASTIC, TSOP1-48