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MBM29F160BE-55TR PDF预览

MBM29F160BE-55TR

更新时间: 2024-11-23 02:51:31
品牌 Logo 应用领域
富士通 - FUJITSU /
页数 文件大小 规格书
53页 542K
描述
16M (2M X 8/1M X 16) BIT

MBM29F160BE-55TR 技术参数

生命周期:Obsolete包装说明:PLASTIC, REVERSE, TSOP1-48
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.76
最长访问时间:55 ns其他特性:CONFIGURABLE AS 1M X 16
启动块:BOTTOMJESD-30 代码:R-PDSO-G48
长度:18.4 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:48
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:-20 °C组织:2MX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1-R
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL类型:NOR TYPE
宽度:12 mmBase Number Matches:1

MBM29F160BE-55TR 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20879-2E  
FLASH MEMORY  
CMOS  
16M (2M × 8/1M × 16) BIT  
MBM29F160TE/BE-55/-70/-90  
GENERAL DESCRIPTION  
The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words  
of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be  
programmed in-system with the standard system 5.0 V VCC supply. 12.0 V VPP is not required for write or erase  
operations. The device can also be reprogrammed in standard EPROM programmers.  
The standard MBM29F160TE/BE offers access times of 55 ns, 70 ns and 90 ns, allowing operation of high-speed  
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write  
enable (WE), and output enable (OE) controls.  
The MBM29F160TE/BE is pin and command set compatible with JEDEC standard E2PROMs. Commands are  
written to the command register using standard microprocessor write timings. Register contents serve as input  
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch  
addresses and data needed for the programming and erase operations. Reading data out of the device is similar  
to reading from 12.0 V Flash or EPROM devices.  
(Continued)  
PRODUCT LINE UP  
Part No.  
VCC = 5.0 V±5%  
VCC = 5.0 V±10%  
MBM29F160TE/160BE  
-55  
-70  
70  
70  
30  
-90  
90  
90  
40  
Ordering Part No.  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
55  
55  
30  
PACKAGES  
48-pin plastic TSOP (I)  
Marking Side  
Marking Side  
(FPT-48P-M20)  
(FPT-48P-M19)  

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