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MBM29F160TE-55 PDF预览

MBM29F160TE-55

更新时间: 2024-11-22 22:58:07
品牌 Logo 应用领域
富士通 - FUJITSU /
页数 文件大小 规格书
53页 542K
描述
16M (2M X 8/1M X 16) BIT

MBM29F160TE-55 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20879-2E  
FLASH MEMORY  
CMOS  
16M (2M × 8/1M × 16) BIT  
MBM29F160TE/BE-55/-70/-90  
GENERAL DESCRIPTION  
The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words  
of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be  
programmed in-system with the standard system 5.0 V VCC supply. 12.0 V VPP is not required for write or erase  
operations. The device can also be reprogrammed in standard EPROM programmers.  
The standard MBM29F160TE/BE offers access times of 55 ns, 70 ns and 90 ns, allowing operation of high-speed  
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write  
enable (WE), and output enable (OE) controls.  
The MBM29F160TE/BE is pin and command set compatible with JEDEC standard E2PROMs. Commands are  
written to the command register using standard microprocessor write timings. Register contents serve as input  
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch  
addresses and data needed for the programming and erase operations. Reading data out of the device is similar  
to reading from 12.0 V Flash or EPROM devices.  
(Continued)  
PRODUCT LINE UP  
Part No.  
VCC = 5.0 V±5%  
VCC = 5.0 V±10%  
MBM29F160TE/160BE  
-55  
-70  
70  
70  
30  
-90  
90  
90  
40  
Ordering Part No.  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
55  
55  
30  
PACKAGES  
48-pin plastic TSOP (I)  
Marking Side  
Marking Side  
(FPT-48P-M20)  
(FPT-48P-M19)  

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