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MASW-000555-13570G PDF预览

MASW-000555-13570G

更新时间: 2024-11-06 05:48:59
品牌 Logo 应用领域
泰科 - TE 二极管开关
页数 文件大小 规格书
7页 125K
描述
SP5T AlGaAs PIN Diode Switch RoHS Compliant

MASW-000555-13570G 数据手册

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MA4AGSW5  
SP5T AlGaAs PIN Diode Switch  
RoHS Compliant  
Rev. V3  
FEATURES  
Ultra Broad Bandwidth: 50 MHz to 50 GHz  
Functional Bandwidth : 50 MHz to 70 GHz  
1.7dB Insertion Loss at 50 GHZ  
35 dB Isolation at 50 GHz  
Low Current consumption.  
-10mA for low loss state  
+10mA for Isolation state  
M/A-COM’s unique AlGaAs hetero-junction  
anode technology.  
Silicon Nitride Passivation  
Polymer Scratch protection  
DESCRIPTION  
M/A-COM’s MA4AGSW5 is an Aluminum-Gallium-  
Arsenide, single pole, five throw (SP5T), PIN diode  
switch. The switch features enhanced AlGaAs anodes  
which are formed using M/A-COM’s patented hetero-  
junction technology. AlGaAs technology produces a  
switch with less loss than a device fabricated using  
conventional GaAs processes. As much as a 0.3 dB  
reduction in insertion loss can be realized at 50 GHz.  
This device is fabricated on an OMCVD epitaxial wafer  
using a process designed for high device uniformity  
and extremely low parasitics. The diodes within the  
chip exhibit low series resistance, low capacitance,  
and fast switching speed. They are fully passivated  
with silicon nitride and have an additional polymer  
layer for scratch protection. The protective coating  
prevents damage during handling and assembly to the  
diode junction and the chip anode air-bridges. Off chip  
bias circuitry is required.  
Yellow areas indicate bond pads  
Absolute Maximum Ratings @ TAMB = +25°C  
Parameter  
Maximum Rating  
-55°C to +125°C  
-55°C to +150°C  
+23dBm C.W.  
25V  
APPLICATIONS  
Operating Temperature  
Storage Temperature  
Incident C.W. RF Power  
Breakdown Voltage  
The high electron mobility of AlGaAs and the low  
capacitance of the PIN diodes used makes this switch  
ideal for fast response, high frequency, multi-throw  
switch designs where the series capacitance in each  
off-arm will load the input. AlGaAs PIN diode switches  
are an ideal choice for switching arrays in radar  
systems, radiometers, test equipment and other multi-  
assembly components.  
Bias Current  
± 25mA  
Assembly Temperature  
Junction Temperature  
+300°C < 10 sec  
+175°C  
Maximum combined operating conditions for RF Power, D.C.  
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @  
+85°C.  
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  

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