SEMICONDUCTOR TECHNICAL DATA
*Motorola preferred devices
TRIACS
12 AMPERES RMS
400 thru 800
VOLTS
Silicon Bidirectional Thyristors
Designed for high performance full–wave ac control applications where high
noise immunity and commutating di/dt are required.
•
•
•
•
•
•
•
Blocking Voltage to 800 Volts
On-State Current Rating of 12 Amperes RMS at 70°C
Uniform Gate Trigger currents in Three Modes
High Immunity to dv/dt — 250 V/µs minimum at 125°C
High Commutating di/dt — 6.5 A/ms minimum at 125°C
Industry Standard TO–220 AB Package
MT2
High Surge Current Capability — 120 Amperes
MT1
MT2
G
CASE 221A–06
(TO-220AB)
Style 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (1)
(T = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
J
V
DRM
Volts
MAC12D
MAC12M
MAC12N
400
600
800
On-State RMS Current
I
12
A
A
T(RMS)
(Full Cycle Sine Wave, 60 Hz, T = 70°C)
C
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, T = 125°C)
I
100
TSM
J
2
2
Circuit Fusing Consideration (t = 8.3 ms)
I t
41
16
A sec
Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 80°C)
P
Watts
Watts
°C
C
GM
Average Gate Power (t = 8.3 ms, T = 80°C)
P
0.35
C
G(AV)
Operating Junction Temperature Range
Storage Temperature Range
T
J
–40 to +125
–40 to +150
T
°C
stg
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
R
2.2
62.5
°C/W
°C
θJC
θJA
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
260
L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
T
J
T
J
= 25°C
=1 25°C
I
—
—
—
—
0.01
2.0
mA
DRM
(1)
V
DRM
andV
foralltypescanbeappliedonacontinuousbasis. Ratingsapplyforzeroornegativegatevoltage;positivegatevoltageshall
RRM
notbeappliedconcurrentwithnegativepotentialontheanode. Blockingvoltagesshallnotbetestedwithaconstantcurrentsourcesuchthatthe
voltage ratings of the devices are exceeded.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
3–53
Motorola Thyristor Device Data