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MAC12HCMG

更新时间： 2024-10-28 03:50:31
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置三端双向交流开关局域网
页数 文件大小 规格书
6页 61K
描述
Triacs Silicon Bidirectional Thyristors

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中文翻译

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MAC12HCMG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.30.00.80风险等级：5.2
外壳连接：MAIN TERMINAL 2配置：SINGLE
关态电压最小值的临界上升速率：600 V/us最大直流栅极触发电流：50 mA
最大直流栅极触发电压：1.5 V最大维持电流：60 mA
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3最大漏电流：2 mA
元件数量：1端子数量：3
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大均方根通态电流：12 A
断态重复峰值电压：600 V子类别：TRIACs
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40触发设备类型：TRIAC
Base Number Matches：1

MAC12HCMG 数据手册

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MAC12HCD, MAC12HCM,  
MAC12HCN  
Preferred Device  
Triacs  
Silicon Bidirectional Thyristors  
Designed primarily for full-wave ac control applications, such as  
motor controls, heating controls or dimmers; or wherever full−wave,  
silicon gate−controlled devices are needed.  
http://onsemi.com  
TRIACS  
12 AMPERES RMS  
400 thru 800 VOLTS  
Features  
• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3  
• High Commutating di/dt and High Immunity to dv/dt @ 125°C  
• Minimizes Snubber Networks for Protection  
MT2  
MT1  
• Blocking Voltage to 800 Volts  
G
• On-State Current Rating of 12 Amperes RMS at 80°C  
• High Surge Current Capability − 100 Amperes  
• Industry Standard TO-220AB Package for Ease of Design  
• Glass Passivated Junctions for Reliability and Uniformity  
• Pb−Free Packages are Available*  
MARKING  
DIAGRAM  
MAC12HCxG  
AYWW  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off-State Voltage (Note 1)  
V
V
V
TO−220AB  
CASE 221A−09  
STYLE 4  
DRM,  
RRM  
1
(T = −40 to 125°C, Sine Wave,  
J
2
50 to 60 Hz, Gate Open)  
MAC12HCD  
3
400  
600  
800  
MAC12HCM  
MAC12HCN  
x
A
Y
= D, M, or N  
= Assembly Location  
= Year  
On-State RMS Current  
I
12  
A
A
T(RMS)  
(All Conduction Angles; T = 80°C)  
WW = Work Week  
C
G
= Pb−Free Package  
Peak Non-Repetitive Surge Current  
I
100  
TSM  
(One Full Cycle, 60 Hz, T = 125°C)  
J
PIN ASSIGNMENT  
2
2
Circuit Fusing Consideration (t = 8.33 ms)  
I t  
41  
16  
A sec  
1
Main Terminal 1  
Peak Gate Power  
P
W
W
GM  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
2
3
4
Main Terminal 2  
Gate  
C
Average Gate Power  
P
0.35  
G(AV)  
(t = 8.3 ms, T = 80°C)  
C
Main Terminal 2  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +125  
−40 to +150  
°C  
°C  
J
T
stg  
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Device  
Package  
Shipping  
MAC12HCD  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC12HCDG  
TO−220AB  
(Pb−Free)  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
MAC12HCM  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC12HCMG  
TO−220AB  
(Pb−Free)  
MAC12HCN  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC12HCNG  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 3  
MAC12HC/D  
123456

中文翻译

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MAC12HCMG 替代型号

型号 品牌 替代类型 描述 数据表
MAC12HCN ONSEMI

完全替代

 Triacs Silicon Bidirectional Thyristors
MAC12HCM ONSEMI

完全替代

 Triacs Silicon Bidirectional Thyristors
MAC12MG ONSEMI

类似代替

 Triacs Silicon Bidirectional Thyristors

与MAC12HCMG相关器件

型号 品牌 获取价格 描述 数据表
MAC12HCN ONSEMI

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 		Triacs Silicon Bidirectional Thyristors
MAC12HCNG ONSEMI

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 		Triacs Silicon Bidirectional Thyristors
MAC12HCNG LITTELFUSE

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 		该三端双向可控硅主要用于全波交流控制应用，例如电机控制、加热控制与调光器；或用于需要全波硅
MAC12M MOTOROLA

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 		TRIACS 12 AMPERES RMS 400 thru 800 VOLTS
MAC12M ONSEMI

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 		Triacs Silicon Bidirectional Thyristors
MAC12M-AF MOTOROLA

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 		TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB,
MAC12M-AJ MOTOROLA

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 		TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB,
MAC12M-AN MOTOROLA

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 		TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB,
MAC12M-AS MOTOROLA

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 		TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB,
MAC12M-AU MOTOROLA

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 		TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB,

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